publications by Ulrich M Goesele.

Papers Published

1. Tong, Q.-Y. and Huang, L.-J. and Chao, Y.-L. and Gang, Q. and Goesele, U., IOS - a new type of materials combination for system-on-a chip preparation, IEEE International SOI Conference, (1999), 104 - 105, [SOI.1999.819874], [abs]
2. Tong, Q.-Y. and Huang, L.-J. and Chao, Y.-L. and Ploessl, A. and Goesele, U., Low dose layer splitting for SOI preparation, IEEE International SOI Conference, (1998), 143 - 144, [SOI.1998.723152], [abs]
3. Lee, T.-H. and Ton, Q.-Y. and Chao, Y.-L. and Huang, L.-J. and Goesele, U., Semiconductor layer transfer by anodic wafer bonding, IEEE International SOI Conference, (1997), 40 - 41, [SOI.1997.634922], [abs]
4. Tan, T.Y. and Goesele, U., Twist wafer bonded 'fixed-film' versus 'compliant' substrates: correlated misfit dislocation generation and contaminant gettering, Applied Physics A: Materials Science & Processing, (1997), 631 - 633, [s003390050530], [abs]
5. Joshi, Subhash M. and Goesele, Ulrich M. and Tan, Teh Y., Minority carrier diffusion length improvement in Czochralski silicon by aluminum gettering, Materials Research Society Symposium - Proceedings, (1995), 279 - 284, [abs]
6. Gafiteanu, R. and You, H.M. and Goesele, U. and Tan, T.Y., Diffusion-segregation equation for simulation in heterostructures, Materials Research Society Symposium Proceedings, (1994), 31 - 37, [abs]
7. Tong, Q.-Y. and Goesele, U., Fabrication of ultrathin SOI by SIMOX wafer bonding (SWB), Journal of Electronic Materials, (1993), 763 - 768, [abs]
8. Goesele, Ulrich and Lehmann, Volker, Porous silicon. A quantum sponge structure?, Conference on Solid State Devices and Materials, (1992), 469 - 471, [abs]
9. Mitani, Kiyoshi and Goesele, Ulrich M., Wafer bonding technology for silicon-on-insulator applications. A review, Journal of Electronic Materials, (1992), 669 - 676, [abs]
10. Feijoo, D. and Lehmann, V. and Mitani, K. and Goesele, U.M., Etch stop barriers in silicon produced by ion implantation of electrically non-active species, Journal of the Electrochemical Society, (1992), 2309 - 2314, [abs]
11. Tong, Qin-Yi and Gafiteanu, Roman and Goesele, Ulrich, Reversible silicon wafer bonding for surface protection. Water-enhanced debonding, Journal of the Electrochemical Society, (1992), 101-102 -, [abs]
12. Yu, S. and Tan, T.Y. and Goesele, U., Physical modeling of zinc and beryllium diffusion in gallium arsenide, Proceedings - The Electrochemical Society, (1991), 345 - 362, [abs]
13. Tan, T.Y. and Goesele, U. and Yu, S., Point defects, diffusion mechanisms, and superlattice disordering in GaAs-based materials, Proceedings - The Electrochemical Society, (1991), 195 - 226, [abs]
14. Kim, Yudong and Massoud, Hisham Z. and Goesele, Ulrich M. and Fair, Richard B., Physical modeling of the time constant of transient enhancement in the diffusion of ion-implanted dopants in silicon, Proceedings - The Electrochemical Society, (1991), 254 - 272, [abs]
15. Tan, T.Y. and Goesele, U. and Yu, S., Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materials, Critical Reviews in Solid State & Materials Sciences, (1991), 47 - 106, [abs]
16. Yang, W.S. and Ahn, K.Y. and Lia, J. and Smith, P. and Tan, T.Y. and Goesele, U., Gettering phenomena in directly bonded silicon wafers, Proceedings - The Electrochemical Society, (1990), 628 - 638, [abs]
17. Marioton, B.P.R. and Goesele, U., Nitridation perturbed tin diffusion in silicon, Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, (1989), 1274 - 1275, [abs]
18. Stengl, R. and Ahn, K.-Y. and Goesele, U., Bubble-free silicon wafer bonding in a non-cleanroom environment, Japanese Journal of Applied Physics, Part 2: Letters, (1988), 2364 - 2366, [abs]