Dr. Goesele's research interests focus on defects and diffusion processes in silicon and other semiconductors; defect formation during crystal growth or during device processing and implications on the electronic quality of the materials; science and technology of semiconductor wafer bonding; quantum effects in porous silicon; self-limited fabrication of nanostructures; quantum dots; ferroelectric thin films, photonic crystals and silicon photonics.

Recent Publications More Publications

1. Tong, Q.-Y. and Huang, L.-J. and Chao, Y.-L. and Gang, Q. and Goesele, U., IOS - a new type of materials combination for system-on-a chip preparation, IEEE International SOI Conference, (1999), ppt. 104 - 105 , [SOI.1999.819874] [abs]
   
2. Tong, Q.-Y. and Huang, L.-J. and Chao, Y.-L. and Ploessl, A. and Goesele, U., Low dose layer splitting for SOI preparation, IEEE International SOI Conference, (1998), ppt. 143 - 144 , [SOI.1998.723152] [abs]
   
3. Lee, T.-H. and Ton, Q.-Y. and Chao, Y.-L. and Huang, L.-J. and Goesele, U., Semiconductor layer transfer by anodic wafer bonding, IEEE International SOI Conference, (1997), ppt. 40 - 41 , [SOI.1997.634922] [abs]
   
4. Tan, T.Y. and Goesele, U., Twist wafer bonded 'fixed-film' versus 'compliant' substrates: correlated misfit dislocation generation and contaminant gettering, Applied Physics A: Materials Science & Processing, vol. 64 no. 6 (1997), ppt. 631 - 633 , [s003390050530] [abs]
   
5. Joshi, Subhash M. and Goesele, Ulrich M. and Tan, Teh Y., Minority carrier diffusion length improvement in Czochralski silicon by aluminum gettering, Materials Research Society Symposium - Proceedings, vol. 378 (1995), ppt. 279 - 284 [abs]