Teh Y. Tan
Professor
Professor Tan is conducting fundamental research in materials science and processes related to electronic materials. He and his colleagues have originated the study of the subject of intrinsic gettering which is now widely used to improve yield in integrated circuit fabrications using Czochralski silicon. Primarily because of this work, the semiconductor industry granted him the SEMMY Award in the materials category in 1987. SEMMY is one of the highest awards the industry gives.
He has also studied the basic aspects of the following topics in silicon: precipitation, kinetic process of defect evolution, impurity diffusion mechanisms and point defects. These studies have led to greater understanding of the structure and properties of defects in silicon. Since 1986, his research interests have also included III-V compound semiconducting materials. He is a recipient of the 1994 Alexander Von Humboldt Prize.
Contact Information:
- Office Location: 186 Engineering Building
- Office Phone: (919) 660-5323, (919) 660-5321
-
Email Address:
Education:
| PhD | University of California at Berkeley | 1971 |
| MS | Tulane University | 1965 |
| BS | National Taiwan University | 1962 |
Curriculum Vitae
Research Interests:
Impurity diffusion mechanisms and point defects in silicon and III-V compounds; line defects; precipitation and gettering; kinetic processes of defect evolution; x-ray scattering and electron microscopy; crystal growth in nano-scale
Specialties:
Thermodynamics
Nanoscience
Nanomaterial manufacturing and characterization
Semiconductors
Materials
Awards, Honors, and Distinctions:
- Alexander Von Humboldt Prize, Alexander von Humboldt Foundation
- Excellent Foreign Scientist Invittee, Japanese Society for the Promotion of Science
- Royal Society Visiting Professorship, City University of Hong Kong
- Semmy Award for Outstanding Contributions to the Semiconductor Industry, Semiconductor Equipment and Materials Institute
Courses Taught:
- ME 512.01 - THERMODYNAMICS/ELEC MAT
Representative Publications: (More Publications)
- N. Li and T. Y. Tan and U. Gosele, Transition region width of nanowire hetero- and pn-junctions grown using vapor-liquid-solid processes, Applied Physics A-materials Science \& Processing, vol 90 no. 4 (2008), pp. 591 -- 596 [abs].
- L. L. Zhao and N. Li and A. Langner and M. Steinhart and T. Y. Tan and E. Pippel and H. Hofmeister and K. N. Tu and U. Gosele, Crystallization of amorphous SiO2 microtubes catalyzed by lithium, Advanced Functional Materials, vol 17 no. 12 (2007), pp. 1952 -- 1957 [abs].
- N. Li and T. Y. Tan and U. Gosele, Chemical tension and global equilibrium in VLS nanostructure growth process: from nanohillocks to nanowires, Applied Physics A-materials Science \& Processing, vol 86 no. 4 (2007), pp. 433 -- 440 [abs].
- Schubert, L. and Werner, P. and Zakharov, N.D. and Gerth, G. and Kolb, F.M. and Long, L. and Gosele, U. and Tan, T.Y., Silicon nanowhiskers grown on ⟨111⟩Si substrates by molecular-beam epitaxy, Appl. Phys. Lett. (USA), vol 84 no. 24 (2004), pp. 4968 - 70 [1.1762701] [abs].
- Tan, T.Y. and Li, N. and Gosele, U., On the thermodynamic size limit of nanowires grown by the vapor-liquid-solid process, Appl. Phys. A, Mater. Sci. Process. (Germany), vol A78 no. 4 (2004), pp. 519 - 26 [s00339-003-2380-5] [abs].