Teh Yu Tan

Publications

  • Li, N; Li, W; Liu, L; Tan, TY, A nucleation-growth model of nanowires produced by the vapor-liquid-solid process, Journal of Applied Physics, vol 114 no. 6 (2013) [10.1063/1.4817794] [abs].
  • Sopori, B; Tan, T; Rupnowski, P, Photovoltaic materials and devices, International Journal of Photoenergy, vol 2012 (2012) [10.1155/2012/673975] [abs].
  • Curtaroloa, S; Awasthia, N; Setyawana, W; Lia, N; Jianga, A; Tan, TY; Morab, E; Boltonc, K; Harutyunyanb, AR, Thermodynamics of carbon in iron nanoparticles at low temperature: Reduced solubility and size-induced nucleation of cementite, Physics Procedia, vol 6 (2010), pp. 16-26 [10.1016/j.phpro.2010.09.023] [abs].
  • Li, N; Tan, TY; Gösele, U, Transition region width of nanowire hetero- and pn-junctions grown using vapor-liquid-solid processes, Applied Physics A: materials science and processing, vol 90 no. 4 (2008), pp. 591-596 [10.1007/s00339-007-4376-z] [abs].
  • Li, H; Li, N; Joshi, SM; Tan, TY, Predominance of alternate diffusion mechanisms for the interstitial- substitutional impurity gold in silicon, Materials Research Society Symposium - Proceedings, vol 994 (2007), pp. 45-50 [abs].
  • Li, N; Tan, TY; Gösele, U, Chemical tension and global equilibrium in VLS nanostructure growth process: From nanohillocks to nanowires, Applied Physics A: materials science and processing, vol 86 no. 4 (2007), pp. 433-440 [10.1007/s00339-006-3809-4] [abs].
  • Li, N; Tan, TY; Gösele, U, Chemical tension in VLS nanostructure growth process: From nanohillocks to nanowires, Materials Research Society Symposium - Proceedings, vol 1017 (2007), pp. 20-25 [abs].
  • Zhao, L; Li, N; Langner, A; Steinhart, M; Tan, TY; Pippel, E; Hofmeister, H; Tu, KN; Gösele, U, Crystallization of amorphous SiO2 microtubes catalyzed by lithium, Advanced Functional Materials, vol 17 no. 12 (2007), pp. 1952-1957 [10.1002/adfm.200601104] [abs].
  • Tan, TY; Gösele, U, Diffusion in semiconductors (2005), pp. 165-208 [10.1007/3-540-30970-5_4] [abs].
  • Negoita, MD; Tan, TY, Metallic precipitate contribution to carrier generation in metal-oxide-semiconductor capacitors due to the Schottky effect, Journal of Applied Physics, vol 95 no. 1 (2004), pp. 191-198 [10.1063/1.1630701] [abs].
  • Schubert, L; Werner, P; Zakharov, ND; Gerth, G; Kolb, FM; Long, L; Gösele, U; Tan, TY, Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy, Applied Physics Letters, vol 84 no. 24 (2004), pp. 4968-4970 [10.1063/1.1762701] [abs].
  • Tan, TY; Li, N; Gösele, U, On the thermodynamic size limit of nanowires grown by the vapor-liquid-solid process, Applied Physics A: Materials Science and Processing, vol 78 no. 4 (2004), pp. 519-526 [10.1007/s00339-003-2380-5] [abs].
  • Negoita, MD; Tan, TY, Metallic precipitate contribution to generation and recombination currents in p-n junction devices due to the Schottky effect, Journal of Applied Physics, vol 94 no. 8 (2003), pp. 5064-5070 [10.1063/1.1611289] [abs].
  • Tan, TY; Li, N; Gösele, U, Is there a thermodynamic size limit of nanowires grown by the vapor-liquid-solid process?, Applied Physics Letters, vol 83 no. 6 (2003), pp. 1199-1201 [10.1063/1.1599984] [abs].
  • Plekhanov, PS; Negoita, MD; Tan, TY, Erratum: Effect of Al-induced gettering and back surface field on the efficiency of Si solar cells (Journal of Applied Physics (2001) 90 (5388)), Journal of Applied Physics, vol 91 no. 8 (2002) [10.1063/1.1464647] [abs].
  • Tan, TY; Lee, ST; Gösele, U, A model for growth directional features in silicon nanowires, Applied Physics A: materials science and processing, vol 74 no. 3 (2002), pp. 423-432 [10.1007/s003390101133] [abs].
  • Tan, TY; Lee, ST; Gösele, U, Modeling growth directional features of silicon nanowires obtained using SiO, Materials Research Society Symposium - Proceedings, vol 719 (2002), pp. 235-240 [abs].
  • Tan, TY, Recent progresses in understanding gettering in silicon, Materials Research Society Symposium - Proceedings, vol 719 (2002), pp. 89-100 [abs].
  • Joshi, SM; Gösele, UM; Tan, TY, Extended high temperature Al gettering for improvement and homogenization of minority carrier diffusion lengths in multicrystalline Si, Solar Energy Materials and Solar Cells, vol 70 no. 2 (2001), pp. 231-238 [10.1016/S0927-0248(01)00029-0] [abs].
  • Plekhanov, PS; Negoita, MD; Tan, TY, Effect of Al-induced gettering and back surface field on the efficiency of Si solar cells, Journal of Applied Physics, vol 90 no. 10 (2001), pp. 5388-5394 [10.1063/1.1412575] [abs].
  • Tan, TY; Cheng, TH; Bose, SK; Chai, TY, Adaptive resource negotiation based control for real time applications, Comput. Commun. (Netherlands), vol 24 no. 13 (2001), pp. 1283-1298 [10.1016/S0140-3664(00)00362-5] [abs].
  • Tan, TY; Plekhanov, PS, A quantitative model of the electrical activity of metal silicide precipitates in silicon based on the Schottky effect, Materials Research Society Symposium - Proceedings, vol 669 (2001), pp. J6111-J6116 [abs].
  • Plekhanov, PS; Tan, TY, Schottky effect model of electrical activity of metallic precipitates in silicon, Applied Physics Letters, vol 76 no. 25 (2000), pp. 3777-3779 [abs].
  • Chen, CH; Gösele, UM; Tan, TY, Dopant diffusion and segregation in semiconductor heterostructures: Part III, Diffusion of Si into GaAs, Applied Physics A: Materials Science and Processing, vol 69 no. 3 (1999), pp. 313-321 [10.1007/s003390051007] [abs].
  • Chen, CH; Gösele, UM; Tan, TY, Dopant diffusion and segregation in semiconductor heterostructures: Part 2. B in GexSi1-x/Si structures, Applied Physics A: Materials Science and Processing, vol 68 no. 1 (1999), pp. 19-24 [abs].
  • Chen, CH; Gösele, UM; Tan, TY, Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs, Journal of Applied Physics, vol 86 no. 10 (1999), pp. 5376-5384 [abs].
  • Chen, CH; Gösele, UM; Tan, TY, Dopant diffusion and segregation in semiconductor heterostructures: Part 1. Zn and Be in III-V compound superlattices, Applied Physics A: Materials Science and Processing, vol 68 no. 1 (1999), pp. 9-18 [abs].
  • Chen, CHO; Gösele, UM; Tan, TY, Fermi-level effect and junction carrier concentration effect on p-type dopant distribution in III-V compound superlattices, Materials Research Society Symposium - Proceedings, vol 535 (1999), pp. 219-224 [abs].
  • Chen, CHO; Gösele, UM; Tan, TY, Fermi-level effect and junction carrier concentration effect on boron distribution in Ge^Si^/Si heterostructures, Materials Research Society Symposium - Proceedings, vol 535 (1999), pp. 275-280 [abs].
  • Plekhanov, PS; Gafiteanu, R; Gösele, UM; Tan, TY, Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications, Journal of Applied Physics, vol 86 no. 5 (1999), pp. 2453-2458 [abs].
  • Scholz, RF; Werner, P; Gösele, U; Tan, TY, The contribution of vacancies to carbon out-diffusion in silicon, Applied Physics Letters, vol 74 no. 3 (1999), pp. 392-394 [abs].
  • Chen, CH; Gosele, U; Tan, TY, Fermi-level effect on group III atom interdiffusion in III-V compounds: bandgap heterogeneity and low silicon-doping, Materials Research Society Symposium - Proceedings, vol 490 (1998), pp. 105-110 [abs].
  • Chen, CH; Gosele, U; Tan, TY, Simulation of under- and supersaturation of gallium vacancies in gallium arsenide during silicon in- and outdiffusion, Materials Research Society Symposium - Proceedings, vol 490 (1998), pp. 99-104 [abs].
  • Joshi, SM; Gosele, UM; Tan, TY, Gold diffusion in silicon during gettering by an aluminum layer, Materials Research Society Symposium - Proceedings, vol 490 (1998), pp. 117-122 [abs].
  • Kästner, G; Gösele, U; Tan, TY, A model of strain relaxation in hetero-epitaxial films on compliant substrates, Applied Physics A: Materials Science and Processing, vol 66 no. 1 (1998), pp. 13-22 [abs].
  • Plekhanov, PS; Gosele, UM; Tan, TY, Nucleation and growth of voids in silicon, Materials Research Society Symposium - Proceedings, vol 490 (1998), pp. 77-82 [abs].
  • Plekhanov, PS; Gösele, UM; Tan, TY, Modeling of nucleation and growth of voids in silicon, Journal of Applied Physics, vol 84 no. 2 (1998), pp. 718-726 [abs].
  • Scholz, R; Gösele, U; Huh, JY; Tan, TY, Carbon-induced undersaturation of silicon self-interstitials, Applied Physics Letters, vol 72 no. 2 (1998), pp. 200-202 [10.1063/1.120684] [abs].
  • Scholz, RF; Gösele, U; Breitenstein, O; Egger, U; Tan, TY, Cathodoluminescence investigation of diffusion studies on the arsenic sublattice in galium arsenide, Solid State Phenomena, vol 63-64 (1998), pp. 183-190 [abs].
  • Schultz, M; Egger, U; Scholz, R; Breitenstein, O; Gösele, U; Tan, TY, Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide, Journal of Applied Physics, vol 83 no. 10 (1998), pp. 5295-5301 [abs].
  • Sopori, BL; Chen, W; Alleman, J; Matson, R; Ravindra, NM; Tan, TY, Grain enhancement of polycrystalline silicon films aided by optical excitation, Materials Research Society Symposium - Proceedings, vol 485 (1998), pp. 95-100 [abs].
  • Tan, TY, Mass transport equations unifying descriptions of isothermal diffusion, thermomigration, segregation, and position-dependent diffusivity, Applied Physics Letters, vol 73 no. 18 (1998), pp. 2678-2680 [10.1063/1.122551] [abs].
  • Tong, QY; Scholz, R; Gösele, U; Lee, TH; Huang, LJ; Chao, YL; Tan, TY, A "smarter-cut" approach to low temperature silicon layer transfer, Applied Physics Letters, vol 72 no. 1 (1998), pp. 49-51 [10.1063/1.120601] [abs].
  • Tan, TY; Gosele, U, Twist wafer bonded ''fixed-film'' versus ''compliant'' substrates: Correlated misfit dislocation generation and contaminant gettering, Applied Physics A: materials science and processing, vol 64 no. 6 (1997), pp. 631-633 [10.1007/s003390050530] [abs].
  • Egger, U; Schultz, M; Werner, P; Breitenstein, O; Tan, TY; Gösele, U; Franzheld, R; Uematsu, M; Ito, H, Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures, Journal of Applied Physics, vol 81 no. 9 (1997), pp. 6056-6061 [abs].
  • Goesele, U; Conrad, D; Werner, P; Tong, QY; Gafiteanu, R; Tan, TY, Point defects, diffusion and gettering in silicon, Materials Research Society Symposium - Proceedings, vol 469 (1997), pp. 13-24 [abs].
  • Gösele, U; Tan, TY; Schultz, M; Egger, U; Werner, P; Scholz, R; Breitenstein, O, Diffusion in GaAs and related compounds: Recent developments, Defect and Diffusion Forum, vol 143-147 (1997), pp. 1079-1094 [10.4028/www.scientific.net/DDF.143-147.1079] [abs].
  • Schroer, E; Hopfe, S; Werner, P; Gösele, U; Duscher, G; Rühle, M; Tan, TY, Oxide precipitation at silicon grain boundaries, Applied Physics Letters, vol 70 no. 3 (1997), pp. 327-329 [abs].
  • Sopori, BL; Alleman, J; Chen, W; Tan, TY; Ravindra, NM, Grain enhancement of thin silicon layers using optical processing, Materials Research Society Symposium - Proceedings, vol 470 (1997), pp. 419-424 [abs].
  • Tan, TY; Gösele, U, Twist wafer bonded "fixed-film" versus "compliant" substrates: Correlated misfit dislocation generation and contaminant gettering, Applied Physics A: Materials Science and Processing, vol 64 no. 6 (1997), pp. 631-633 [abs].
  • Tan, TY; Plekhanov, P; Gösele, UM, Nucleation barrier of voids and dislocation loops in silicon, Applied Physics Letters, vol 70 no. 13 (1997), pp. 1715-1717 [abs].
  • Sopori, BL; Jastrzebski, L; Tan, T, Comparison of gettering in single- and multicrystalline silicon for solar cells, Conference Record of the IEEE Photovoltaic Specialists Conference (1996), pp. 625-628 [abs].
  • Tan, TY; Gösele, UM, Effects of p-type dopants on enhancing AlAs/GaAs superlattice disordering, Materials Chemistry and Physics, vol 44 no. 1 (1996), pp. 45-50 [10.1016/0254-0584(95)01654-D] [abs].
  • Tong, QY; Lee, TH; Kim, WJ; Tan, TY; Goesele, U; You, HM; Yun, W; Sin, JKO, Feasibility study of VLSI device layer transfer by CMP PETEOS direct bonding, IEEE International SOI Conference (1996), pp. 36-37 [abs].
  • Chen, CH; Tan, TY, On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects, Appl. Phys. A, Mater. Sci. Process. (Germany), vol A61 no. 4 (1995), pp. 397-405 [10.1007/s003390050219] [abs].
  • Chen, CH; Tan, TY, On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects, Applied Physics A: Materials Science and Processing, vol 61 no. 4 (1995), pp. 397-405 [10.1007/s003390050219] [abs].
  • Gafiteanu, R; Gosele, U; Tan, TY, Phosphorus and aluminum gettering of gold in silicon: simulation and optimization considerations, Materials Research Society Symposium - Proceedings, vol 378 (1995), pp. 297-302 [abs].
  • Huh, JY; Gösele, U; Tan, TY, Coprecipitation of oxygen and carbon in Czochralski silicon: A growth kinetic approach, Journal of Applied Physics, vol 78 no. 10 (1995), pp. 5926-5935 [10.1063/1.360594] [abs].
  • Huh, JY; Tan, TY; Gösele, U, Model of partitioning of point defect species during precipitation of a misfitting compound in Czochralski silicon, Journal of Applied Physics, vol 77 no. 11 (1995), pp. 5563-5571 [10.1063/1.359197] [abs].
  • Joshi, SM; Goesele, UM; Tan, TY, Minority carrier diffusion length improvement in Czochralski silicon by aluminum gettering, Materials Research Society Symposium - Proceedings, vol 378 (1995), pp. 279-284 [abs].
  • Joshi, SM; Gösele, UM; Tan, TY, Improvement of minority carrier diffusion length in Si by Al gettering, Journal of Applied Physics, vol 77 no. 8 (1995), pp. 3858-3863 [10.1063/1.358563] [abs].
  • Tan, TY, Point defects and diffusion mechanisms pertinent to the Ga sublattice of GaAs, Materials Chemistry and Physics, vol 40 no. 4 (1995), pp. 245-252 [abs].
  • Tong, QY; Kaido, G; Tong, L; Reiche, M; Shi, F; Steinkirchner, J; Tan, TY; Gosele, U, Simple chemical treatment for preventing thermal bubbles in silicon water bonding, Journal of the Electrochemical Society, vol 142 no. 10 (1995), pp. L201-L203 [abs].
  • Tong, QY; Kidao, G; Tan, TY; Gosele, U, Wafer bonding of Si with dissimilar materials, International Conference on Solid-State and Integrated Circuit Technology Proceedings (1995), pp. 524-526 [abs].
  • Uematsu, M; Werner, P; Schultz, M; Tan, TY; Gösele, UM, Sulfur diffusion and the interstitial contribution to arsenic self-diffusion in GaAs, Applied Physics Letters, vol 67 (1995) [10.1063/1.114810] [abs].
  • Gafiteanu, R; You, HM; Goesele, U; Tan, TY, Diffusion-segregation equation for simulation in heterostructures, Materials Research Society Symposium Proceedings, vol 318 (1994), pp. 31-37 [abs].
  • Hsia, SL; McGuire, GE; Tan, TY; Smith, PL; Lynch, WT, High resistivity Co and Ti silicide formation on silicon-on-insulator substrates, Thin Solid Films, vol 253 no. 1-2 (1994), pp. 462-466 [abs].
  • Hsia, SL; Tan, TY; Smith, PL; McGuire, GE, Arsenic diffusion and segregation behavior at the interface of epitaxial CoSi2 film and Si substrate, Materials Research Society Symposium Proceedings, vol 320 (1994), pp. 409-414 [abs].
  • Hsia, SL; Tan, TY; Smith, PL; McGuire, GE, Assured epitaxial CoSi2 phase formation on (001) Si-on-insulator substrates using CoSi/Ti bimetallic source materials, Digest of Technical Papers - Symposium on VLSI Technology (1994), pp. 123-124 [abs].
  • Hsia, SL; Tan, TY; Smith, PL; McGuire, GE, CoSi and CoSi2 phase formation on bulk and SOI Si substrates, Materials Research Society Symposium Proceedings, vol 320 (1994), pp. 373-378 [abs].
  • Tan, TY; Taylor, WJ, Chapter 9 Mechanisms of Oxygen Precipitation: Some Quantitative Aspects, Semiconductors and Semimetals, vol 42 no. C (1994), pp. 353-390 [10.1016/S0080-8784(08)60252-5] [abs].
  • Tan, TY, Thermal equilibrium concentrations of point defects in gallium arsenide, Journal of Physics and Chemistry of Solids, vol 55 no. 10 (1994), pp. 917-929 [abs].
  • Taylor, WJ; Gösele, UM; Tan, TY, Precipitate strain relief via point defect interaction: models for SiO2 in silicon, Materials Chemistry and Physics, vol 36 no. 3-4 (1994) [abs].
  • TAYLOR, W; GOSELE, U; TAN, T, COPRECIPITATION OF CARBON AND OXYGEN IN SILICON - THE DOMINANT FLUX CRITERION, Japanese Journal of Applied Physics, vol 32 no. 11A (1993), pp. 4857-4862 [10.1143/JJAP.32.4857] [abs].
  • Hsia, SL; Tan, TY; Smith, PL; McGuire, GE, Formation mechanism of epitaxial CoSi2 films on (001) Si using Ti-Co bimetallic layer source materials, Materials Research Society Symposium Proceedings, vol 280 (1993), pp. 603-608 [abs].
  • Jäger, W; Rucki, A; Urban, K; Hettwer, HG; Stolwijk, NA; Mehrer, H; Tan, TY, Formation of void/Ga-precipitate pairs during Zn diffusion into GaAs: The competition of two thermodynamic driving forces, Journal of Applied Physics, vol 74 no. 7 (1993), pp. 4409-4422 [10.1063/1.354412] [abs].
  • Tan, TY; You, HM; Gosele, UM, Thermal equilibrium concentrations and effects of negatively charged Ga vacancies in n-type GaAs, Appl. Phys. A, Solids Surf. (Germany), vol A56 no. 3 (1993), pp. 249-258 [abs].
  • Tan, TY; You, HM; Gosele, UM, Thermal equilibrium concentrations and effects of Ga vacancies in n-type GaAs, Materials Research Society Symposium Proceedings, vol 300 (1993), pp. 377-390 [abs].
  • Tan, TY; You, HM; Gösele, UM, Thermal equilibrium concentrations and effects of negatively charged Ga vacancies in n-type GaAs, Applied Physics A: materials science and processing, vol 56 no. 3 (1993), pp. 249-258 [10.1007/BF00539483] [abs].
  • Taylor, WJ; Gosele, UM; Tan, TY, Co-precipitation of carbon and oxygen in silicon: The dominant flux criterion, Japanese Journal of Applied Physics, vol 32 no. 11 A (1993), pp. 4857-4862 [abs].
  • Taylor, WJ; Gösele, UM; Tan, TY, Precipitate strain relief via point defect interaction: models for SiO2 in silicon, Materials Chemistry and Physics, vol 34 no. 2 (1993), pp. 166-174 [abs].
  • Taylor, WJ; Tan, TY; Gösele, U, Carbon precipitation in silicon: Why is it so difficult, Applied Physics Letters, vol 62 no. 25 (1993), pp. 3336-3338 [10.1063/1.109063] [abs].
  • You, HM; Gosele, UM; Tan, TY, Crystal surface stoichiometry and the Fermi level effects on outdiffusion of Si in GaAs, Materials Research Society Symposium Proceedings, vol 282 (1993), pp. 151-156 [abs].
  • You, HM; Gösele, UM; Tan, TY, Simulation of the transient indiffusion-segregation process of triply negatively charged Ga vacancies in GaAs and AlAs/GaAs superlattices, Journal of Applied Physics, vol 74 no. 4 (1993), pp. 2461-2470 [10.1063/1.354683] [abs].
  • You, HM; Gösele, UM; Tan, TY, A study of Si outdiffusion from predoped GaAs, Journal of Applied Physics, vol 73 no. 11 (1993), pp. 7207-7216 [10.1063/1.352394] [abs].
  • You, HM; Tan, TY; Gosele, UM; Hofler, GE; Hsieh, KC; Jr, NH, Layer disordering and carrier concentration in heavily carbon-doped AlGaAs/GaAs superlattices, Materials Research Society Symposium Proceedings, vol 300 (1993), pp. 409-414 [abs].
  • You, HM; Tan, TY; Gösele, UM; Lee, ST; Höfler, GE; Hsieh, KC; Jr, NH, Al-Ga interdiffusion, carbon acceptor diffusion, and hole reduction in carbon-doped Al0.4Ga0.6As/GaAs superlattices: The As 4 pressure effect, Journal of Applied Physics, vol 74 no. 4 (1993), pp. 2450-2460 [10.1063/1.354682] [abs].
  • Zimmermann, H; Gösele, U; Tan, TY, Diffusion of Fe in InP via the kick-out mechanism, Applied Physics Letters, vol 62 no. 1 (1993), pp. 75-77 [10.1063/1.108832] [abs].
  • Zimmermann, H; Gösele, U; Tan, TY, Modeling of zinc-indiffusion-induced disordering of GaAs/AlAs superlattices, Journal of Applied Physics, vol 73 no. 1 (1993), pp. 150-157 [10.1063/1.353892] [abs].
  • Hsia, SL; Tan, TY; Smith, P; McGuire, GE, Resistance and structural stabilities of epitaxial CoSi2 films on (001) Si substrates, Journal of Applied Physics, vol 72 no. 5 (1992), pp. 1864-1873 [10.1063/1.351659] [abs].
  • Li, J; Yang, WS; Tan, TY; Chevacharoenkul, S; Chapman, R, Liquid silicide formation on the Si wafer free surface during Ni diffusion at 1200°C, Journal of Applied Physics, vol 71 no. 1 (1992), pp. 196-203 [10.1063/1.350736] [abs].
  • Li, J; Yang, WS; Tan, TY, Enhancement of gold solubility in silicon wafers, Journal of Applied Physics, vol 71 no. 1 (1992), pp. 527-529 [10.1063/1.350693] [abs].
  • Tan, TY; You, HM; Yu, S; Gösele, UM; Jäger, W; Boeringer, DW; Zypman, F; Tsu, R; Lee, ST, Disordering in 69GaAs/71GaAs isotope superlattice structures, Journal of Applied Physics, vol 72 no. 11 (1992), pp. 5206-5212 [10.1063/1.352002] [abs].
  • Taylor, WJ; Gösele, U; Tan, TY, SiO2 precipitate strain relief in Czochralski Si: Self-interstitial emission versus prismatic dislocation loop punching, Journal of Applied Physics, vol 72 no. 6 (1992), pp. 2192-2196 [10.1063/1.351610] [abs].
  • TAN, T, POINT-DEFECT THERMAL EQUILIBRIA IN GAAS, Materials Science and Engineering B: Advanced Functional Solid-state Materials, vol 10 no. 3 (1991), pp. 227-239 [10.1016/0921-5107(91)90130-N] [abs].
  • Chen, S; Lee, ST; Braunstein, G; Ko, KY; Tan, TY, Distribution mechanism of voids in Si-implanted GaAs, Journal of Applied Physics, vol 70 no. 2 (1991), pp. 656-660 [10.1063/1.349669] [abs].
  • Hsia, SL; Tan, TY; Smith, P; McGuire, GE, Formation of epitaxial CoSi2 films on (001) silicon using Ti-Co alloy and bimetal source materials, Journal of Applied Physics, vol 70 no. 12 (1991), pp. 7579-7587 [10.1063/1.349713] [abs].
  • Kim, Y; Tan, TY; Massoud, HZ; Fair, RB, Modeling the enhanced diffusion of implanted boron in silicon, Proceedings - The Electrochemical Society, vol 91 no. 4 (1991), pp. 304-320 [abs].
  • Lee, ST; Chen, S; Braunstein, G; Ko, KY; Tan, TY, Anomalous electrical activation in Si-implanted GaAs/AlGaAs superlattices, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol 59-60 no. PART 2 (1991), pp. 999-1002 [abs].
  • Tan, TY; Goesele, U; Yu, S, Point defects, diffusion mechanisms, and superlattice disordering in GaAs-based materials, Proceedings - The Electrochemical Society, vol 91 no. 4 (1991), pp. 195-226 [abs].
  • Tan, TY; Goesele, U; Yu, S, Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materials, Critical Reviews in Solid State and Materials Sciences, vol 17 no. 1 (1991), pp. 47-106 [abs].
  • Tan, TY; Yu, S; Gösele, U, Determination of vacancy and self-interstitial contributions to gallium self-diffusion in GaAs, Journal of Applied Physics, vol 70 no. 9 (1991), pp. 4823-4826 [10.1063/1.349048] [abs].
  • Tan, TY; Yu, S; Gösele, U, Atomistic mechanisms of dopant-induced multiple quantum well mixing and related phenomena, Optical and Quantum Electronics, vol 23 no. 7 (1991), pp. S863-S881 [10.1007/BF00624976] [abs].
  • Tan, TY, Point defect thermal equilibria in GaAs, Materials Science and Engineering B: Advanced Functional Solid-state Materials, vol 10 no. 3 (1991), pp. 227-239 [abs].
  • Taylor, WJ; Tan, TY; Gösele, UM, Oxygen precipitation in silicon: The role of strain and self-interstitials, Applied Physics Letters, vol 59 no. 16 (1991), pp. 2007-2009 [10.1063/1.106136] [abs].
  • Yu, S; Tan, TY; Goesele, U, Physical modeling of zinc and beryllium diffusion in gallium arsenide, Proceedings - The Electrochemical Society, vol 91 no. 4 (1991), pp. 345-362 [abs].
  • Yu, S; Tan, TY; Gösele, U, Diffusion mechanism of zinc and beryllium in gallium arsenide, Journal of Applied Physics, vol 69 no. 6 (1991), pp. 3547-3565 [10.1063/1.348497] [abs].
  • Yu, S; Tan, TY; Gösele, U, Diffusion mechanism of chromium in GaAs, Journal of Applied Physics, vol 70 no. 9 (1991), pp. 4827-4836 [10.1063/1.349049] [abs].
  • Ahn, KY; Stengl, R; Tan, TY; Gosele, U; Smith, P, Growth, shrinkage, and stability of interfacial oxide layers between directly bonded silicon wafers, Appl. Phys. A, Solids Surf. (West Germany), vol A50 no. 1 (1990), pp. 85-94 [abs].
  • Ahn, KY; Stengl, R; Tan, TY; Gosele, U; Smith, P, Growth, shrinkage, and stability of interfacial oxide layers between directly bonded silicon wafers, Applied Physics A: Solids and Surfaces, vol 50 no. 1 (1990), pp. 85-94 [abs].
  • Chen, S; Lee, ST; Braunstein, G; Ko, KY; Zheng, LR; Tan, TY, Void formation and its effect on dopant diffusion and carrier activation in Si-implanted GaAs, Jpn. J. Appl. Phys. 2, Lett. (Japan), vol 29 no. 11 (1990), pp. 1950-1953 [abs].
  • Lee, ST; Chen, S; Braunstein, G; Ko, KY; Ott, ML; Tan, TY, Void formation, electrical activation, and layer intermixing in Si-implanted GaAs/AlGaAs superlattices, Applied Physics Letters, vol 57 no. 4 (1990), pp. 389-391 [10.1063/1.103701] [abs].
  • Yang, WS; Ahn, KY; Lia, J; Smith, P; Tan, TY; Goesele, U, Gettering phenomena in directly bonded silicon wafers, Proceedings - The Electrochemical Society, vol 90 no. 7 (1990), pp. 628-638 [abs].
  • Ahn, KY; Stengl, R; Tan, TY; Gösele, U; Smith, P, Stability of interfacial oxide layers during silicon wafer bonding, Journal of Applied Physics, vol 65 no. 2 (1989), pp. 561-563 [10.1063/1.343141] [abs].
  • Chen, S; Lee, ST; Braunstein, G; Tan, TY, Void formation and inhibition of layer intermixing in ion-impIanted GaAs/AlGaAs superlattices, Applied Physics Letters, vol 55 no. 12 (1989), pp. 1194-1196 [10.1063/1.101653] [abs].
  • Gosele, U; Ahn, KY; Marioton, BPR; Tan, TY; Lee, ST, Do oxygen molecules contribute to oxygen diffusion and thermal donor formation in silicon?, Appl. Phys. A, Solids Surf. (West Germany), vol A48 no. 3 (1989), pp. 219-228 [abs].
  • Gösele, U; Ahn, KY; Marioton, BPR; Tan, TY; Lee, ST, Do oxygen molecules contribute to oxygen diffusion and thermal donor formation in silicon?, Applied Physics A: Solids and Surfaces, vol 48 no. 3 (1989), pp. 219-228 [10.1007/BF00619388] [abs].
  • Kola, RR; Rozgonyi, GA; Li, J; Rogers, WB; Tan, TY; Bean, KE; Lindberg, K, Transition metal silicide precipitation in silicon induced by rapid thermal processing and free-surface gettering, Applied Physics Letters, vol 55 no. 20 (1989), pp. 2108-2110 [10.1063/1.102342] [abs].
  • Marioton, BPR; Tan, TY; Gösele, U, Influence of dislocations on diffusion-induced nonequilibrium point defects in III-V compounds, Applied Physics Letters, vol 54 no. 9 (1989), pp. 849-851 [10.1063/1.100846] [abs].
  • Rogers, WB; Massoud, HZ; Fair, RB; Gösele, UM; Tan, TY; Rozgonyi, GA, The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon, Journal of Applied Physics, vol 65 no. 11 (1989), pp. 4215-4219 [10.1063/1.343303] [abs].
  • Stengl, R; Tan, T; Gosele, U, Model for the silicon wafer bonding process, Japanese Journal of Applied Physics, vol 28 no. 10 (1989), pp. 1735-1741 [abs].
  • Taylor, W; Marioton, BPR; Tan, TY; Gosele, U, The diffusivity of silicon self-interstitials, Radiat. Eff. Defects Solids (UK), vol 111-112 no. 1-2 (1989), pp. 131-150 [abs].
  • Yu, S; Gösele, UM; Tan, TY, A model of Si diffusion in GaAs based on the effect of the Fermi level, Journal of Applied Physics, vol 66 no. 7 (1989), pp. 2952-2961 [10.1063/1.344176] [abs].
  • TAN, T; GOSELE, U, DIFFUSION MECHANISMS AND SUPERLATTICE DISORDERING IN GAAS, Materials Science and Engineering B: Advanced Functional Solid-state Materials, vol 1 no. 1 (1988), pp. 47-65 [10.1016/0921-5107(88)90030-X] [abs].
  • Gosele, U; Tan, TY, Point defects and diffusion in silicon and gallium arsenide, Diffus. Defect Data, Solid State Data A, Defect Diffus. Forum (Liechtenstein), vol A59 (1988), pp. 1-16 [abs].
  • Hill, AJ; Cocks, FH; Goesele, UM; Jones, PL; Tan, TY; Kingon, AI, Investigation of Y-Ba-Cu-O superconducting materials by positron annihilation lifetime spectroscopy, High-Temperature Superconducting Materials. Preparations, Properties, and Processing (1988), pp. 305-311 [abs].
  • Tan, TY; Gösele, U, Mechanisms of doping-enhanced superlattice disordering and of gallium self-diffusion in GaAs, Applied Physics Letters, vol 52 no. 15 (1988), pp. 1240-1242 [10.1063/1.99168] [abs].
  • Tan, TY; Gösele, U, Diffusion mechanisms and superlattice disordering in GaAs, Materials Science and Engineering B: Advanced Functional Solid-state Materials, vol 1 no. 1 (1988), pp. 47-65 [abs].
  • Tan, TY; Gösele, U, Destruction mechanism of III-V compound quantum well structures due to impurity diffusion, Journal of Applied Physics, vol 61 no. 5 (1987), pp. 1841-1845 [10.1063/1.338027] [abs].
  • Marioton, BPR; Gosele, U; Tan, TY, ARE SELF-INTERSTITIALS REQUIRED TO EXPLAIN NONEQUILIBRIUM DIFFUSION PHENOMENON IN SILICON?, Chemtronics, vol 1 no. 4 (1986), pp. 156-160 [abs].
  • Ochrlein, GS; Tan, TY; Kleinhenz, RL; Lindstrom, JL, ON THE QUESTION OF OXYGEN DIFFUSION DURING OXYGEN RELATED THERMAL DONOR FORMATION IN SILICON., Materials Research Society Symposia Proceedings, vol 71 (1986), pp. 65-67 [abs].
  • Tan, TY; Kleinhenz, R; Schneider, CP, On the kinetics of oxygen clustering and thermal donor formation in Czochralski silicon, Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon (1986), pp. 195-204 [abs].
  • Tan, TY; Kung, CY, ON OXYGEN PRECIPITATION RETARDATION/RECOVERY PHENOMENA, NUCLEATION INCUBATION PHENOMENON, AND THE EXIGENT-ACCOMMODATION-VOLUME FACTOR OF PRECIPITATION., Proceedings - The Electrochemical Society, vol 86-4 (1986), pp. 864-873 [abs].
  • Tan, TY; Kung, CY, OXYGEN PRECIPITATION RETARDATION AND RECOVERY PHENOMENA IN CZOCHRALSKI SILICON: EXPERIMENTAL OBSERVATIONS, NUCLEI DISSOLUTION MODEL, AND RELEVANCY WITH NUCLEATION ISSUES., Journal of Applied Physics, vol 59 no. 3 (1986), pp. 917-931 [10.1063/1.336564] [abs].
  • Tan, TY, Exigent-accommodation-volume of precipitation and formation of oxygen precipitates in silicon, Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon (1986), pp. 269-279 [abs].
  • Braunig, D; Yang, KH; Tan, TY; Schneider, CP, IN DEPTH GENERATION LIFETIME PROFILING OF HEAT-TREATED CZOCHRALSKI SILICON., Physica Status Solidi (A) Applied Research, vol 92 no. 1 (1985), pp. 327-335 [abs].
  • Goesele, U; Tan, TY, INFLUENCE OF POINT DEFECTS ON DIFFUSION AND GETTERING IN SILICON., Materials Research Society Symposia Proceedings, vol 36 (1985), pp. 105-116 [abs].
  • Tan, TY; Gosele, U, Point defects, diffusion processes, and swirl defect formation in silicon, Appl. Phys. A, Solids Surf. (West Germany), vol A37 no. 1 (1985), pp. 1-17 [abs].
  • Tan, TY; Gosele, U, POINT DEFECTS, DIFFUSION PROCESSES, AND SWIRL DEFECT FORMATION IN SILICON., Applied Physics A: Solids and Surfaces, vol A37 no. 1 (1985), pp. 1-17 [abs].
  • Tan, TY; Yang, KH; Schneider, CP, Observation of a doping-dependent orientation effect of the depletion of silicon self-interstitials during oxidation, Journal of Applied Physics, vol 57 no. 6 (1985), pp. 1812-1815 [10.1063/1.334408] [abs].
  • Yang, KH; Tan, TY, ON THE INTERACTION OF INTRINSIC AND EXTRINSIC GETTERING SCHEMES IN SILICON., Materials Research Society Symposia Proceedings, vol 36 (1985), pp. 223-229 [abs].
  • Butz, R; Rubloff, GW; Tan, TY; Ho, PS, Chemical and structural aspects of reaction at the Ti/Si interface, Physical Review B - Condensed Matter and Materials Physics, vol 30 no. 10 (1984), pp. 5421-5429 [10.1103/PhysRevB.30.5421] [abs].
  • Clabes, JG; Rubloff, GW; Tan, TY, Chemical reaction and Schottky-barrier formation at V/Si interfaces, Physical Review B - Condensed Matter and Materials Physics, vol 29 no. 4 (1984), pp. 1540-1550 [10.1103/PhysRevB.29.1540] [abs].
  • Tan, TY; Goesele, U, POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON., Proceedings - The Electrochemical Society, vol 84-7 (1984), pp. 151-175 [abs].
  • Tan, TY; Gosele, U, POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON., Electrochemical Society Extended Abstracts, vol 84-1 (1984) [abs].
  • Tan, TY, CHARACTERIZATION OF SEMICONDUCTOR SILICON TRANSMISSION ELECTRON MICROSCOPY., Proceedings of SPIE - The International Society for Optical Engineering, vol 452 (1984), pp. 170-176 [abs].
  • Goesele, U; Tan, TY, ROLE OF VACANCIES AND SELF-INTERSTITIALS IN DIFFUSION AND AGGLOMERATION PHENOMENA IN SILICON., Proceedings - The Electrochemical Society, vol 83-4 (1983), pp. 17-36 [abs].
  • Goesele, U; Tan, TY, THERMAL DONOR FORMATION BY THE AGGLOMERATION OF OXYGEN IN SILICON., Materials Research Society Symposia Proceedings, vol 14 (1983), pp. 153-157 [abs].
  • Goesele, U; Tan, TY, NATURE OF POINT DEFECTS AND THEIR INFLUENCE ON DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURES., Materials Research Society Symposia Proceedings, vol 14 (1983), pp. 45-59 [abs].
  • Schmid, PE; Ho, PS; Föll, H; Tan, TY, Effects of variations of silicide characteristics on the Schottky-barrier height of silicide-silicon interfaces, Physical Review B - Condensed Matter and Materials Physics, vol 28 no. 8 (1983), pp. 4593-4601 [10.1103/PhysRevB.28.4593] [abs].
  • Smith, DA; Tan, TY, GRAIN GROWTH AND GRAIN-BOUNDARY DISLOCATIONS IN POLYSILICON., Advances in Ceramics, vol 6 (1983), pp. 184-191 [abs].
  • Tan, TY; Ginsberg, BJ, Observation of oxidation-enhanced and oxidation-retarded diffusion of antimony in silicon, Applied Physics Letters, vol 42 no. 5 (1983), pp. 448-450 [10.1063/1.93966] [abs].
  • Tan, TY; Ginsberg, BJ, OBSERVATION OF OXIDATION-ENHANCED AND -RETARDED DIFFUSION OF ANTIMONY IN SILICON: THE BEHAVIOR OF (111) WAFERS., Materials Research Society Symposia Proceedings, vol 14 (1983), pp. 141-145 [abs].
  • Tan, TY; Gosele, U; Morehead, FF, ON THE NATURE OF POINT DEFECTS AND THE EFFECT OF OXIDATION ON SUBSTITUTIONAL DOPANT DIFFUSION IN SILICON., Applied Physics A: Solids and Surfaces, vol A 31 no. 2 (1983), pp. 97-108 [abs].
  • Tan, TY; Gosele, U; Morehead, FF, On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon, Appl. Phys. A, Solids Surf. (West Germany), vol A31 no. 2 (1983), pp. 97-108 [abs].
  • Tan, TY; Gosele, U; Morehead, FF, ON THE NATURE OF POINT DEFECTS AND THE EFFECT OF OXIDATION ON SUBSTITUTIONAL DOPANT DIFFUSION IN SILICON., Applied Physics A: Solids and Surfaces, vol A 31 no. 2 (1983), pp. 97-108 [abs].
  • Tan, TY; Morehead, F; Gosele, U, DETERMINATION OF VACANCY AND SELF-INTERSTITIAL CONTRIBUTIONS TO THE Si SELF-DIFFUSION COEFFICIENT., Electrochemical Society Extended Abstracts, vol 83-1 (1983), pp. 432-433 [abs].
  • Tan, TY; Morehead, F; Gosele, U, EXAMINATION OF VACANCY AND SELF-INTERSTITIAL CONTRIBUTIONS TO SILICON SELF-DIFFUSION AND SWIRL DEFECT FORMATION., Proceedings - The Electrochemical Society, vol 83-9 (1983), pp. 325-336 [abs].
  • Goesele, U; Tan, TY, OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON., Applied Physics A: Solids and Surfaces, vol A28 no. 2 (1982), pp. 79-92 [abs].
  • Gosele, U; Tan, TY, Oxygen diffusion and thermal donor formation in silicon, Appl. Phys. A, Solids Surf. (West Germany), vol A28 no. 2 (1982), pp. 79-92 [abs].
  • Schmid, PE; Ho, PS; Tan, TY, Correlation between Schottky barrier height and phase stoichiometry/structure of silicide-silicon interfaces, J. Vac. Sci. Technol. (USA), vol 20 no. 3 (1982), pp. 688-689 [10.1116/1.571629] [abs].
  • Smith, DA; Tan, TY, EFFECT OF DOPING AND OXIDATION ON GRAIN GROWTH IN POLYSILICON., Materials Research Society Symposia Proceedings, vol 5 (1982), pp. 65-70 [abs].
  • Tan, TY; Goesele, U, KINETICS OF SILICON STACKING FAULT GROWTH/SHRINKAGE IN AN OXIDIZING AMBIENT CONTAINING A CHLORINE COMPOUND., Journal of Applied Physics, vol 53 no. 7 (1982), pp. 4767-4778 [10.1063/1.331312] [abs].
  • Tan, TY; Gösele, U, Oxidation-enhanced or retarded diffusion and the growth or shrinkage of oxidation-induced stacking faults in silicon, Applied Physics Letters, vol 40 no. 7 (1982), pp. 616-619 [10.1063/1.93200] [abs].
  • Corbett, JW; Karins, JP; Tan, TY, Ion-induced defects in semiconductors, Nuclear Instruments and Methods, vol 182-183 no. PART 1 (1981), pp. 457-476 [abs].
  • Foell, H; Tan, TY; Krakow, W, UNDISSOCIATED DISLOCATIONS AND INTERMEDIATE DEFECTS IN As** plus ION DAMAGED SILICON., Mat Res Soc Symp Proc, vol 2 (1981), pp. 173-177 [abs].
  • Krakow, W; Tan, TY; Foell, H, DETECTION OF POINT DEFECT CHAINS IN ION IRRADIATED SILICON BY HIGH RESOLUTION ELECTRON MICROSCOPY., Mat Res Soc Symp Proc (1981), pp. 185-190 [abs].
  • Tan, TY; Foell, H; Mader, S; Krakow, W, A TENTATIVE IDENTIFICATION OF THE NATURE OF left brace 113 right brace STACKING FAULTS IN Si- MODEL AND EXPERIMENT., Mat Res Soc Symp Proc, vol 2 (1981), pp. 179-184 [abs].
  • Tan, TY; Foll, H; Hu, SM, On the diamond-cubic to hexagonal phase transformation in silicon, Philos. Mag. A, Phys. Condens. Matter Defects Mech. Prop. (UK), vol 44 no. 1 (1981), pp. 127-140 [abs].
  • Tan, TY; Gösele, U, Growth kinetics of oxidation-induced stacking faults in silicon: A new concept, Applied Physics Letters, vol 39 no. 1 (1981), pp. 86-88 [10.1063/1.92526] [abs].
  • Tan, TY, DISLOCATION NUCLEATION MODELS FROM POINT DEFECT CONDENSATIONS IN SILICON AND GERMANIUM., Mat Res Soc Symp Proc, vol 2 (1981), pp. 163-172 [abs].
  • Tan, TY, Atomic modelling of homogeneous nucleation of dislocations from condensation of point defects in silicon, Philos. Mag. A, Phys. Condens. Matter Defects Mech. Prop. (UK), vol 44 no. 1 (1981), pp. 101-125 [abs].
  • Tice, WK; Tan, TY, PRECIPITATION OF OXYGEN AND INTRINSIC GETTERING IN SILICON., Mat Res Soc Symp Proc, vol 2 (1981), pp. 367-380 [abs].
  • Corbett, JW; Karins, JP; Tan, TY, ION-INDUCED DEFECTS IN SEMICONDUCTORS., Nuclear instruments and methods, vol 182 no. 183/pt 1 (1980), pp. 457-447 [10.1016/0029-554X(81)90717-5] [abs].
  • Ho, PS; Tan, TY, Submicron mask alignment by coherent light sources, IBM Tech. Discl. Bull. (USA), vol 23 no. 1 (1980), pp. 360-361 [abs].
  • Rimini, E; Chu, WK; Baglin, JEE; Tan, TY; Hodgson, RT, Laser annealing of silicon implanted with both argon and arsenic, Applied Physics Letters, vol 37 no. 1 (1980), pp. 81-83 [10.1063/1.91711] [abs].
  • Tan, TY; Föll, H; Krakow, W, Detection of extended interstitial chains in ion-damaged silicon, Applied Physics Letters, vol 37 no. 12 (1980), pp. 1102-1104 [10.1063/1.91888] [abs].
  • Ho, PS; Tan, TY; Lewis, JE; Rubloff, GW, CHEMICAL AND STRUCTURAL PROPERTIES OF THE Pd/Si INTERFACE DURING THE INITIAL STAGES OF SILICIDE FORMATION., Journal of vacuum science & technology, vol 16 no. 5 (1979), pp. 1120-1124 [10.1116/1.570171] [abs].
  • Tan, TY, Residual stacking-fault-type contrast in silicon after apparent unfaulting reactions, Applied Physics Letters, vol 34 no. 10 (1979), pp. 714-716 [10.1063/1.90616] [abs].
  • Tsu, R; Hodgson, RT; Tan, TY; Baglin, JE, Order-disorder transition in single-crystal silicon induced by pulsed uv laser irradiation, Physical Review Letters, vol 42 no. 20 (1979), pp. 1356-1358 [10.1103/PhysRevLett.42.1356] [abs].
  • Goodhew, PJ; Tan, TY; Balluffi, RW, Low energy planes for tilt grain boundaries in gold, Acta Metallurgica, vol 26 no. 4 (1978), pp. 557-567 [abs].
  • Tan, TY; Gardner, EE; Tice, WK, Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si, Applied Physics Letters, vol 30 no. 4 (1977), pp. 175-176 [10.1063/1.89340] [abs].
  • Tan, TY; Hwang, JCM; Goodhew, PJ; Balluffi, RW, Preparation and applications of thin film specimens containing grain boundaries of controlled geometry, Thin Solid Films, vol 33 no. 1 (1976), pp. 1-11 [abs].
  • Tan, TY; Tice, WK, OXYGEN PRECIPITATION AND THE GENERATION OF DISLOCATIONS IN SILICON., Philos Mag, vol 34 no. 4 (1976), pp. 615-631 [abs].
  • Tan, TY; Wu, LL; Tice, WK, Nucleation of stacking faults at oxide precipitate-dislocation complexes in silicon, Applied Physics Letters, vol 29 no. 12 (1976), pp. 765-767 [10.1063/1.88941] [abs].
  • Tice, WK; Tan, TY, Nucleation of CuSi precipitate colonies in oxygen-rich silicon, Applied Physics Letters, vol 28 no. 9 (1976), pp. 564-565 [10.1063/1.88825] [abs].
  • Sass, SL; Tan, TY; Balluffi, RW, DETECTION OF THE PERIODIC STRUCTURE OF HIGH-ANGLE TWIST BOUNDARIES - 1. ELECTRON DIFFRACTION STUDY., Philos Mag, vol 31 no. 3 (1975), pp. 559-573 [abs].
  • Tan, TY; Sass, SL; Balluffi, RW, DETECTION OF THE PERIODIC STRUCTURE OF HIGH-ANGLE TWIST BOUNDARIES - 2. HIGH RESOLUTION ELECTRON MICROSCOPY STUDY., Philos Mag, vol 31 no. 3 (1975), pp. 575-585 [abs].
  • Wagner, W; Tan, TY; Balluffi, RW, FACETING OF HIGH-ANGLE GRAIN BOUNDARIES IN THE COINCIDENCE LATTICE., Phil Mag, vol 29 no. 4 (1974), pp. 895-904 [abs].
  • Balluffi, RW; Tan, TY, Comments on the range of applicability of the grain boundary (secondary) dislocation model to high angle grain boundaries, Scripta Metallurgica, vol 6 no. 11 (1972), pp. 1033-1040 [abs].
  • Tan, TY; Bell, WL; Thomas, G, Crystal thickness dependence of Kikuchi line spacing, Philos. Mag. (UK), vol 24 no. 188 (1971), pp. 417-424 [abs].
  • Schwarz, SE; Tan, TY, Wave interactions in saturable absorbers, Applied Physics Letters, vol 10 no. 1 (1967), pp. 4-7 [10.1063/1.1754798] [abs].
  • Tan, ; Y, T; Nunn, ; M, W; Jr, , Azimuthally periodic electrostatically focused electron ribbon beams, IEEE Transactions on Electron Devices, vol ED-13 no. 10 (1966), pp. 706-713 [abs].
  • Nunn, ; M, W; Jr, ; Tan, ; Y, T, Electrostatically-focused ribbon beams employing periodic-cylindrical electron lenses, IEEE Transactions on Electron Devices, vol ED-11 no. 11 (1964), pp. 524-525 [abs].
  • Geipel, HJ; Shasteen, RB; Tan, TY; Tice, WK, Control of stacking fault generation in recessed oxide processing, IBM Tech. Discl. Bull. (USA), vol 21 no. 4 [abs].