Teh Y. Tan

Publications

Papers Published

  1. N. Li and T. Y. Tan and U. Gosele, Transition region width of nanowire hetero- and pn-junctions grown using vapor-liquid-solid processes, Applied Physics A-materials Science & Processing, vol 90 no. 4 (2008), pp. 591 -- 596 [abs].
  2. L. L. Zhao and N. Li and A. Langner and M. Steinhart and T. Y. Tan and E. Pippel and H. Hofmeister and K. N. Tu and U. Gosele, Crystallization of amorphous SiO2 microtubes catalyzed by lithium, Advanced Functional Materials, vol 17 no. 12 (2007), pp. 1952 -- 1957 [abs].
  3. N. Li and T. Y. Tan and U. Gosele, Chemical tension and global equilibrium in VLS nanostructure growth process: from nanohillocks to nanowires, Applied Physics A-materials Science & Processing, vol 86 no. 4 (2007), pp. 433 -- 440 [abs].
  4. Schubert, L. and Werner, P. and Zakharov, N.D. and Gerth, G. and Kolb, F.M. and Long, L. and Gosele, U. and Tan, T.Y., Silicon nanowhiskers grown on ⟨111⟩Si substrates by molecular-beam epitaxy, Appl. Phys. Lett. (USA), vol 84 no. 24 (2004), pp. 4968 - 70 [1.1762701] [abs].
  5. Tan, T.Y. and Li, N. and Gosele, U., On the thermodynamic size limit of nanowires grown by the vapor-liquid-solid process, Appl. Phys. A, Mater. Sci. Process. (Germany), vol A78 no. 4 (2004), pp. 519 - 26 [s00339-003-2380-5] [abs].
  6. Negoita, M.D. and Tan, T.Y., Metallic precipitate contribution to carrier generation in metal-oxide-semiconductor capacitors due to the Schottky effect, J. Appl. Phys. (USA), vol 95 no. 1 (2004), pp. 191 - 8 [1.1630701] [abs].
  7. Negoita, M.D. and Tan, T.Y., Metallic precipitate contribution to generation and recombination currents in p-n junction devices due to the Schottky effect, J. Appl. Phys. (USA), vol 94 no. 8 (2003), pp. 5064 - 70 [1.1611289] [abs].
  8. Tan, T.Y. and Na Li and Gosele, U., Is there a thermodynamic size limit of nanowires grown by the vapor-liquid-solid process?, Appl. Phys. Lett. (USA), vol 83 no. 6 (2003), pp. 1199 - 201 [1.1599984] [abs].
  9. Plekhanov, P.S. and Negoita, M.D. and Tan, T.Y., Erratum: Effect of Al-induced gettering and back surface field on the efficiency of Si solar cells (Journal of Applied Physics (2001) 90 (5388)), Journal of Applied Physics, vol 91 no. 8 (2002), pp. 5508 - [1.1464647].
  10. Tan, T.Y. and Lee, S.T. and Gosele, U., Modeling growth directional features of silicon nanowires obtained using SiO, Materials Research Society Symposium - Proceedings, vol 719 (2002), pp. 235 - 240 [abs].
  11. Tan, T.Y., Recent progresses in understanding gettering in silicon, Materials Research Society Symposium - Proceedings, vol 719 (2002), pp. 89 - 100 [abs].
  12. Tan, T.Y. and Lee, S.T. and Gosele, U., A model for growth directional features in silicon nanowires, Appl. Phys. A, Mater. Sci. Process. (Germany), vol A74 no. 3 (2002), pp. 423 - 32 [s003390101133] [abs].
  13. Joshi, S.M. and Gosele, U.M. and Tan, T.Y., Extended high temperature Al gettering for improvement and homogenization of minority carrier diffusion lengths in multicrystalline Si, Sol. Energy Mater. Sol. Cells (Netherlands), vol 70 no. 2 (2001), pp. 231 - 8 [S0927-0248(01)00029-0] [abs].
  14. Plekhanov, P.S. and Negoita, M.D. and Tan, T.Y., Effect of Al-induced gettering and back surface field on the efficiency of Si solar cells, J. Appl. Phys. (USA), vol 90 no. 10 (2001), pp. 5388 - 94 [1.1412575] [abs].
  15. Tan, T.Y. and Plekhanov, P.S., A quantitative model of the electrical activity of metal silicide precipitates in silicon based on the Schottky effect, Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions III. Symposium (Materials Research Society Proceedings Vol.669) (2001), pp. 6 - 11 [abs].
  16. Tan, Teh Y. and Plekhanov, Pavel S., A quantitative model of the electrical activity of metal silicide precipitates in silicon based on the Schottky effect, Materials Research Society Symposium - Proceedings, vol 669 (2001), pp. 6111-6116 - [abs].
  17. Tan, T.-Y. and Cheng, T.H. and Bose, S.K. and Chai, T.-Y., Adaptive resource negotiation based control for real time applications, Comput. Commun. (Netherlands), vol 24 no. 13 (2001), pp. 1283 - 98 [S0140-3664(00)00362-5] [abs].
  18. Tan, T.-Y. and Cheng Tee Hiang and Bose, S.K., QoS for interactive network applications under priority assignment control scheme, Conference Proceedings of the 2000 IEEE International Performance, Computing, and Communications Conference (Cat. No.00CH37086) (2000), pp. 449 - 55 [PCCC.2000.830349] [abs].
  19. Piekhanov, P.S. and Tan, T.Y., Schottky effect model of electrical activity of metallic precipitates in silicon, Appl. Phys. Lett. (USA), vol 76 no. 25 (2000), pp. 3777 - 9 [1.126778] [abs].
  20. Chang-Ho Chen and Gosele, U.M. and Tan, T.Y., Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs, J. Appl. Phys. (USA), vol 86 no. 10 (1999), pp. 5376 - 84 [1.371534] [abs].
  21. Chang-Ho Chen and Gosele, U.M. and Tan, T.Y., Fermi-level effect and junction carrier concentration effect on p-type dopant distribution in III-V compound superlattices, III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium (1999), pp. 219 - 24 [abs].
  22. Chen, Chang-Ho and Gosele, Ulrich and Tan, Teh Y., Fermi-level effect and junction carrier concentration effect on boron distribution in GexSi1-x/Si heterostructures, Materials Research Society Symposium - Proceedings, vol 535 (1999), pp. 275 - 280 [abs].
  23. Scholz, R.F. and Werner, P. and Gosele, U. and Tan, T.Y., The contribution of vacancies to carbon out-diffusion in silicon, Applied Physics Letters, vol 74 no. 3 (1999), pp. 392 - 394 [1.123081] [abs].
  24. Chang-Ho Chen and Gosele, U.M. and Tan, T.Y., Fermi-level effect and junction carrier concentration effect on boron distribution in GexSi1-xSi heterostructures, III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium (1999), pp. 275 - 80 [abs].
  25. Chen, Chang-Ho and Gosele, Ulrich M. and Tan, Teh Y., Fermi-level effect and junction carrier concentration effect on p-type dopant distribution in III-V compound superlattices, Materials Research Society Symposium - Proceedings, vol 535 (1999), pp. 219 - 224 [abs].
  26. Plekhanov, P.S. and Gosele, U.M. and Tan, T.Y., Physical and numerical modeling of gettering of precipitated metallic impurities in Si, AIP Conf. Proc. (USA) no. 462 (1999), pp. 412 - 17 [abs].
  27. Scholz, R.F. and Werner, P. and Gosele, U. and Tan, T.Y., The contribution of vacancies to carbon out-diffusion in silicon, Appl. Phys. Lett. (USA), vol 74 no. 3 (1999), pp. 392 - 4 [1.123081] [abs].
  28. Chen, C.H. and Gosele, U.M. and Tan, T.Y., Dopant diffusion and segregation in semiconductor heterostructures. Pt. 2. B in GexSi1-x/Si structures, Appl. Phys. A, Mater. Sci. Process. (Germany), vol 68 no. 1 (1999), pp. 19 - 24 [s003390050848] [abs].
  29. Chen, C.H. and Gosele, U.M. and Tan, T.Y., Dopant diffusion and segregation in semiconductor heterostructures. Pt. 1. Zn and Be in III-V compound superlattices, Appl. Phys. A, Mater. Sci. Process. (Germany), vol 68 no. 1 (1999), pp. 9 - 18 [s003390050847] [abs].
  30. Tan, T.Y., Mass transport equations unifying descriptions of isothermal diffusion, thermomigration, segregation, and position-dependent diffusivity, Appl. Phys. Lett. (USA), vol 73 no. 18 (1998), pp. 2678 - 80 [1.122551] [abs].
  31. Plekhanov, P.S. and Gosele, U.M. and Tan, T.Y., Nucleation and growth of voids in silicon, Materials Research Society Symposium - Proceedings, vol 490 (1998), pp. 77 - 82 [abs].
  32. Chen, C.-H. and Gosele, U. and Tan, T.Y., Fermi-level effect on group III atom interdiffusion in III-V compounds: bandgap heterogeneity and low silicon-doping, Materials Research Society Symposium - Proceedings, vol 490 (1998), pp. 105 - 110 [abs].
  33. Scholz, R.F. and Gosele, U. and Breitenstein, O. and Egger, U. and Tan, T.Y., Cathodoluminescence investigation of diffusion studies on the arsenic sublattice in gallium arsenide, Diffus. Defect Data B, Solid State Phenom. (Switzerland), vol 63-64 (1998), pp. 183 - 90 [abs].
  34. Chen, C.-H. and Gosele, U. and Tan, T.Y., Simulation of under- and supersaturation of gallium vacancies in gallium arsenide during silicon in- and outdiffusion, Semiconductor Process and Device Performance Modelling. Symposium (1998), pp. 99 - 104 [abs].
  35. Plekhanov, P.S. and Gosele, U.M. and Tan, T.Y., Nucleation and growth of voids in silicon, Semiconductor Process and Device Performance Modelling. Symposium (1998), pp. 77 - 82 [abs].
  36. Joshi, Subhash M. and Gosele, Ulrich M. and Tan, Teh Y., Gold diffusion in silicon during gettering by an aluminum layer, Materials Research Society Symposium - Proceedings, vol 490 (1998), pp. 117 - 122 [abs].
  37. Scholz, R.F. and Goesele, U. and Breitenstein, O. and Egger, U. and Tan, T.Y., Cathodoluminescence investigation of diffusion studies on the arsenic sublattice in gallium arsenide, Diffusion and Defect Data Pt.B: Solid State Phenomena, vol 63-64 (1998), pp. 183 - 190 [abs].
  38. Chen, C.-H. and Gosele, U. and Tan, T.Y., Simulation of under- and supersaturation of gallium vacancies in gallium arsenide during silicon in- and outdiffusion, Materials Research Society Symposium - Proceedings, vol 490 (1998), pp. 99 - 104 [abs].
  39. Sopori, B.L. and Chen, W. and Alleman, J. and Matson, R. and Ravindra, N.M. and Tan, T.Y., Grain enhancement of polycrystalline silicon films aided by optical excitation, Materials Research Society Symposium - Proceedings, vol 485 (1998), pp. 95 - 100 [abs].
  40. Joshi, S.M. and Gosele, U.M. and Tan, T.Y., Gold diffusion in silicon during gettering by an aluminum layer, Semiconductor Process and Device Performance Modelling. Symposium (1998), pp. 117 - 22 [abs].
  41. Tong, Q.-Y. and Lee, T.-H. and Huang, L.-J. and Chao, Y.-L. and Kim, W.J. and Scholz, R. and Tan, T.Y. and Gosele, U., Design considerations for Si and SiC layer transfer by H implantation, Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications (1998), pp. 521 - 8 [abs].
  42. Tan, T.Y. and Gafiteanu, R. and Joshi, S.M. and Gosele, U., Science and modeling of impurity gettering in silicon, Proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. Silicon Materials Science and Technology, vol vol.2 (1998), pp. 1050 - 63 [abs].
  43. Chen, C.-H. and Gosele, U. and Tan, T.Y., Fermi-level effect on group III atom interdiffusion in III-V compounds: bandgap heterogenity and low silicon-doping, Semiconductor Process and Device Performance Modelling. Symposium (1998), pp. 105 - 10 [abs].
  44. Sopori, B.L. and Chen, W. and Alleman, J. and Matson, R. and Ravindra, N.M. and Tan, T.Y., Grain enhancement of polycrystalline silicon films aided by optical excitation [solar cells], Thin-Film Structures for Photovoltaics. Symposium (1998), pp. 95 - 100 [abs].
  45. Tan, T.Y. and Chen, C.-H. and Gosele, U. and Scholz, R., Fermi-level effect, electric field effect, and diffusion mechanisms in GaAs based III-V compound semiconductors, Diffusion Mechanisms in Crystalline Materials. Symposium (1998), pp. 321 - 33 [abs].
  46. Plekhanov, P.S. and Gosele, U.M. and Tan, T.Y., Modeling of nucleation and growth of voids in silicon, J. Appl. Phys. (USA), vol 84 no. 2 (1998), pp. 718 - 26 [1.368128] [abs].
  47. Schultz, M. and Egger, U. and Scholz, R. and Breitenstein, O. and Gosele, U. and Tan, T.Y., Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide, J. Appl. Phys. (USA), vol 83 no. 10 (1998), pp. 5295 - 301 [1.367354] [abs].
  48. Scholz, R. and Gosele, U. and Huh, J.-Y. and Tan, T.Y., Carbon-induced undersaturation of silicon self-interstitials, Appl. Phys. Lett. (USA), vol 72 no. 2 (1998), pp. 200 - 2 [1.120684] [abs].
  49. Kaestner, G. and Goesele, U. and Tan, T.Y., A model of strain relaxation in hetero-epitaxial films on compliant substrates, Appl. Phys. A, Mater. Sci. Process. (Germany), vol 66 no. 1 (1998), pp. 13 - 22 [s003390050631] [abs].
  50. Tong, Q.-Y. and Scholz, R. and Gosele, U. and Lee, T.-H. and Huang, L.-J. and Chao, T.-L. and Tan, T.Y., A “smarter-cut“ approach to low temperature silicon layer transfer, Appl. Phys. Lett. (USA), vol 72 no. 1 (1998), pp. 49 - 51 [1.120601] [abs].
  51. Goesele, U. and Conrad, D. and Werner, P. and Tong, Q.-Y. and Gafiteanu, R. and Tan, T.Y., Point defects, diffusion and gettering in silicon, Materials Research Society Symposium - Proceedings, vol 469 (1997), pp. 13 - 24 [abs].
  52. Gosele, U. and Conrad, D. and Werner, P. and Tong, Q.-Y. and Gafiteanu, R. and Tan, T.Y., Point defects, diffusion and gettering in silicon, Defects and Diffusion in Silicon Processing. Symposium (1997), pp. 13 - 24 [abs].
  53. Tan, T.Y. and Gafiteanu, R. and Gosele, U.M., Physical and numerical modeling of impurity gettering in silicon [solar cells], AIP Conf. Proc. (USA) no. 394 (1997), pp. 215 - 24 [abs].
  54. Goesele, U. and Tan, T. Y. and Schultz, M. and Egger, U., Diffusion in GaAs and Related Compounds: Recent Developments, Diffusion and Defect Data. Pt A Defect and Diffusion Forum, vol 143/1 no. 2 (1997), pp. 1079 -.
  55. Sopori, B.L. and Alleman, J. and Chen, W. and Tan, T.Y. and Ravindra, N.M., Grain enhancement of thin silicon layers using optical processing, Rapid Thermal and Integrated Processing VI. Symposium (1997), pp. 419 - 24 [abs].
  56. Tan, T.Y. and Goesele, U., Twist wafer bonded “fixed-film” versus “compliant” substrates: correlated misfit dislocation generation and contaminant gettering, Appl. Phys. A, Mater. Sci. Process. (Germany), vol A64 no. 6 (1997), pp. 631 - 3 [s003390050530] [abs].
  57. Egger, U. and Schultz, M. and Werner, P. and Breitenstein, O. and Tan, T.Y. and Gosele, U. and Franzheld, R. and Uematsu, M. and Ito, H., Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures, J. Appl. Phys. (USA), vol 81 no. 9 (1997), pp. 6056 - 61 [1.364453] [abs].
  58. Tan, T.Y. and Plekhanov, P. and Gosele, U.M., Nucleation barrier of voids and dislocation loops in silicon, Appl. Phys. Lett. (USA), vol 70 no. 13 (1997), pp. 1715 - 17 [1.118652] [abs].
  59. Schroer, E. and Hopfe, S. and Werner, P. and Gosele, U. and Duscher, G. and Ruhle, M. and Tan, T.Y., Oxide precipitation at silicon grain boundaries, Appl. Phys. Lett. (USA), vol 70 no. 3 (1997), pp. 327 - 9 [1.118405] [abs].
  60. Tong, Q.-Y. and Lee, T.-H. and Kim, W.-J. and Tan, T.Y. and Gosele, U., Feasibility study of VLSI device layer transfer by CMP PETEOS direct bonding, 1996 IEEE International SOI Conference Proceedings (Cat. No.35937) (1996), pp. 36 - 7 [SOI.1996.552481] [abs].
  61. Joshi, S.M. and Gafiteanu, R. and Gosele, U.M. and Tan, T.Y., Simulations and experiments on external gettering of silicon, AIP Conf. Proc. (USA) no. 353 (1996), pp. 527 - 34 [abs].
  62. Gosele, U. and Plossl, A. and Tan, T.Y., The influence of carbon on the effective diffusivities of intrinsic point defects in silicon, Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology (1996), pp. 309 - 23 [abs].
  63. Tan, T.Y. and Goesele, U.M., Effects of p-type dopants on enhancing AlAs/GaAs superlattice disordering, Mater. Chem. Phys. (Switzerland), vol 44 no. 1 (1996), pp. 45 - 50 [0254-0584(95)01654-D] [abs].
  64. Huh, J.-Y. and Gosele, U. and Tan, T.Y., Coprecipitation of oxygen and carbon in Czochralski silicon: a growth kinetic approach, J. Appl. Phys. (USA), vol 78 no. 10 (1995), pp. 5926 - 35 [1.360594] [abs].
  65. Uematsu, M. and Werner, P. and Schultz, M. and Tan, T.Y. and Gosele, U.M., Sulfur diffusion and the interstitial contribution to arsenic self-diffusion in GaAs, Appl. Phys. Lett. (USA), vol 67 no. 19 (1995), pp. 2863 - 5 [1.114810] [abs].
  66. Chen, C.H. and Tan, T.Y., On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects, Appl. Phys. A, Mater. Sci. Process. (Germany), vol A61 no. 4 (1995), pp. 397 - 405 [s003390050219] [abs].
  67. Tong, Q.-Y. and Kaido, G. and Tong, L. and Reiche, M. and Shi, F. and Steinkirchner, J. and Tan, T.Y. and Gosele, U., A simple chemical treatment for preventing thermal bubbles in silicon wafer bonding, J. Electrochem. Soc. (USA), vol 142 no. 10 (1995), pp. 201 - 3 [abs].
  68. Tong, Q.-Y. and Kidao, G. and Tan, T.Y. and Gosele, U., Wafer bonding of Si with dissimilar materials, International Conference on Solid-State and Integrated Circuit Technology Proceedings (1995), pp. 524 - 526 [abs].
  69. Gafiteanu, R. and Gosele, U. and Tan, T.Y., Phosphorus and aluminum gettering of gold in silicon: simulation and optimization considerations, Defect and Impurity Engineered Semiconductors and Devices. Symposium (1995), pp. 297 - 302 [abs].
  70. Joshi, S.M. and Gesele, U.M. and Tan, T.Y., Minority carrier diffusion length improvement in Czochralski silicon by aluminum gettering, Defect and Impurity Engineered Semiconductors and Devices. Symposium (1995), pp. 279 - 84 [abs].
  71. Joshi, Subhash M. and Goesele, Ulrich M. and Tan, Teh Y., Minority carrier diffusion length improvement in Czochralski silicon by aluminum gettering, Materials Research Society Symposium - Proceedings, vol 378 (1995), pp. 279 - 284 [abs].
  72. Tong, Q.-Y. and Kidao, G. and Tan, T.Y. and Gosele, U., Wafer bonding of Si with dissimilar materials, 1995 4th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.95TH8143) (1995), pp. 524 - 6 [ICSICT.1995.503338] [abs].
  73. Gafiteanu, R. and Gosele, U. and Tan, T.Y., Phosphorus and aluminum gettering of gold in silicon: simulation and optimization considerations, Materials Research Society Symposium - Proceedings, vol 378 (1995), pp. 297 - 302 [abs].
  74. Huh, J.-Y. and Tan, T.Y. and Gosele, U., Model of partitioning of point defect species during precipitation of a misfitting compound in Czochralski silicon, J. Appl. Phys. (USA), vol 77 no. 11 (1995), pp. 5563 - 71 [1.359197] [abs].
  75. Tan, T.Y., Point defects and diffusion mechanisms pertinent to the Ga sublattice of GaAs, Mater. Chem. Phys. (Switzerland), vol 40 no. 4 (1995), pp. 245 - 52 [0254-0584(95)01488-8] [abs].
  76. Joshi, S.M. and Gosele, U.M. and Tan, T.Y., Improvement of minority carrier diffusion length in Si by Al gettering [solar cells], J. Appl. Phys. (USA), vol 77 no. 8 (1995), pp. 3858 - 63 [1.358563] [abs].
  77. Tan, T.Y., Thermal equilibrium concentrations of point defects in gallium arsenide, J. Phys. Chem. Solids (UK), vol 55 no. 10 (1994), pp. 917 - 29 [0022-3697(94)90111-2] [abs].
  78. Hsia, S.L. and Tan, T.Y. and Smith, P.L. and McGuire, G.E., CoSi and CoSi2 phase formation on bulk and SOI Si substrates, Materials Research Society Symposium Proceedings, vol 320 (1994), pp. 373 - 378 [abs].
  79. Gafiteanu, R. and You, H.M. and Goesele, U. and Tan, T.Y., Diffusion-segregation equation for simulation in heterostructures, Materials Research Society Symposium Proceedings, vol 318 (1994), pp. 31 - 37 [abs].
  80. Hsia, S.L. and Tan, T.Y. and Smith, P.L. and McGuire, G.E., Assured epitaxial CoSi2 phase formation on (001) Si-on-insulator substrates using CoSi/Ti bimetallic source materials, 1994 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.94CH3433-0) (1994), pp. 123 - 4 [VLSIT.1994.324426] [abs].
  81. Hsia, S.L. and Tan, T.Y. and Smith, P.L. and McGuire, G.E., CoSi and CoSi2 phase formation in bulk and SOI Si substrates, Silicides, Germanides, and Their Interfaces. Symposium (1994), pp. 373 - 8 [abs].
  82. Hsia, S.L. and McGuire, G.E. and Tan, T.Y. and Smith, P.L. and Lynch, W.T., High resistivity Co and Ti silicide formation on silicon-on-insulator substrates, Thin Solid Films, vol 253 no. 1-2 (1994), pp. 462 - 466 [0040-6090(94)90367-0] [abs].
  83. Hsia, S.L. and Tan, T.Y. and Smith, P.L. and McGuire, G.E., Arsenic diffusion and segregation behavior at the interface of epitaxial CoSi2 film and Si substrate, Materials Research Society Symposium Proceedings, vol 320 (1994), pp. 409 - 414 [abs].
  84. Gafiteanu, R. and You, H.-M. and Goesele, U. and Tan, T.Y., Diffusion-segregation equation for simulation in heterostructures, Interface Control of Electrical, Chemical, and Mechanical Properties. Symposium (1994), pp. 31 - 7 [abs].
  85. Tan, T.Y. and Gafiteanu, R. and You, H.-M. and Gosele, U., Diffusion-segregation equation for modeling in heterostructures, AIP Conf. Proc. (USA) no. 303 (1994), pp. 478 - 88 [abs].
  86. Hsia, S.L. and Tan, T.Y. and Smith, P.L. and McGuire, G.E., Arsenic diffusion and segregation behavior at the interface of epitaxial CoSi2 film and Si substrate, Silicides, Germanides, and Their Interfaces. Symposium (1994), pp. 409 - 14 [abs].
  87. Taylor, W.J. and Gosele, U.M. and Tan, T.Y., Co-precipitation of carbon and oxygen in silicon: the dominant flux criterion, Jpn. J. Appl. Phys. 1, Regul. Pap. Short Notes (Japan), vol 32 no. 11A (1993), pp. 4857 - 62 [abs].
  88. Jager, W. and Rucki, A. and Urban, K. and Hettwer, H.-G. and Stolwijk, N.A. and Mehrer, H. and Tan, T.Y., Formation of void/Ga-precipitate pairs during Zn diffusion into GaAs: the competition of two thermodynamic driving forces, J. Appl. Phys. (USA), vol 74 no. 7 (1993), pp. 4409 - 22 [1.354412] [abs].
  89. Jager, W. and Rucki, A. and Urban, K. and Hettwer, H.-G. and Stolwijk, N.A. and Mehrer, H. and Tan, T.Y., Formation of void/Ga-precipitate pairs during Zn diffusion into GaAs. Competition of two thermodynamic driving forces (1993), pp. 531 - 534.
  90. Jager, W. and Rucki, A. and Urban, K. and Hettwer, H.-G. and Stolwijk, N.A. and Mehrer, H. and Tan, T.Y., Formation of void/Ga-precipitate pairs during Zn diffusion into GaAs: competition of two thermodynamic driving forces, Microscopy of Semiconducting Materials 1993. Proceedings of the Royal Microscopical Society Conference (1993), pp. 531 - 4 [abs].
  91. Tan, Teh Y. and You, Horng-Ming and Gosele, Ulrich M., Thermal equilibrium concentrations and effects of Ga vacancies in n-type GaAs, Materials Research Society Symposium Proceedings, vol 300 (1993), pp. 377 - 390 [abs].
  92. You, H.M. and Tan, T.Y. and Gosele, U.M. and Hofler, G.E. and Hsieh, K.C. and Holonak, N., Jr. and Lee, S.-T., Layer disordering and carrier concentration in heavily carbon-doped AlGaAs/GaAs superlattices, III-V Electronic and Photonic Device Fabrication and Performance (1993), pp. 409 - 14 [abs].
  93. Hsia, S.L. and Tan, T.Y. and Smith, P.L. and McGuire, G.E., Formation mechanism of epitaxial CoSi2 films on (001) Si using Ti-Co bimetallic layer source materials, Materials Research Society Symposium Proceedings, vol 280 (1993), pp. 603 - 608 [abs].
  94. Hsia, S.L. and Tan, T.Y. and Smith, P.L. and McGuire, G.E., Formation mechanism of epitaxial CoSi2 films on (001)Si using Ti-Co bimetallic layer source materials, Evolution of Surface and Thin Film Microstructure Symposium (1993), pp. 603 - 8 [abs].
  95. Gafiteanu, R. and Chevacharoenkul, S. and Goesele, U.M. and Tan, T.Y., Twist boundaries in silicon. A model system (1993), pp. 87 - 90.
  96. You, H.-M. and Gosele, U.M. and Tan, T.Y., Crystal surface stoichiometry and the Fermi level effects on outdiffusion of Si in GaAs, Chemical Perspectives of Microelectronic Materials III Symposium (1993), pp. 151 - 6 [abs].
  97. Gafiteanu, R. and Chevacharoenkul, S. and Gosele, U.M. and Tan, T.Y., Twist boundaries in silicon: a model system, Microscopy of Semiconducting Materials 1993. Proceedings of the Royal Microscopical Society Conference (1993), pp. 87 - 90 [abs].
  98. Tan, T.Y. and You, H.M. and Gosele, U.M., Thermal equilibrium concentrations and effects of Ga vacancies in n-type GaAs, III-V Electronic and Photonic Device Fabrication and Performance (1993), pp. 377 - 90 [abs].
  99. You, H.M. and Tan, T.Y. and Gosele, U.M. and Hofler, G.E. and Hsieh, K.C. and Holonyak, N. Jr., Layer disordering and carrier concentration in heavily carbon-doped AlGaAs/GaAs superlattices, Materials Research Society Symposium Proceedings, vol 300 (1993), pp. 409 - 414 [abs].
  100. Horng-Ming You and Gosele, U.M. and Tan, T.Y., Simulation of the transient indiffusion-segregation process of triply negatively charged Ga vacancies in GaAs and AlAs/GaAs superlattices, J. Appl. Phys. (USA), vol 74 no. 4 (1993), pp. 2461 - 70 [1.354683] [abs].
  101. You, H.M. and Tan, T.Y. and Gosele, U.M. and Lee, S.-T. and Hofler, G.E. and Hsieh, K.C. and Holonyak, N., Jr., Al-Ga interdiffusion, carbon acceptor diffusion, and hole reduction in carbon-doped Al0.4Ga0.6As/GaAs superlattices: the As4 pressure effect, J. Appl. Phys. (USA), vol 74 no. 4 (1993), pp. 2450 - 60 [1.354682] [abs].
  102. Taylor, W.J. and Tan, T.Y. and Gosele, U., Carbon precipitation in silicon: why is it so difficult?, Appl. Phys. Lett. (USA), vol 62 no. 25 (1993), pp. 3336 - 8 [1.109063] [abs].
  103. Horng-Ming You and Gosele, U.M. and Tan, T.Y., A study of Si outdiffusion from predoped GaAs, J. Appl. Phys. (USA), vol 73 no. 11 (1993), pp. 7207 - 16 [1.352394] [abs].
  104. Taylor, W.J. and Gosele, U.M. and Tan, T.Y., Precipitate strain relief via point defect interaction: models for SiO2 in silicon, Mater. Chem. Phys. (Switzerland), vol 34 no. 2 (1993), pp. 166 - 74 [0254-0584(93)90208-4] [abs].
  105. Tan, T.Y. and You, H.-M. and Gosele, U.M., Thermal equilibrium concentrations and effects of negatively charged Ga vacancies in n-type GaAs, Appl. Phys. A, Solids Surf. (Germany), vol A56 no. 3 (1993), pp. 249 - 58 [abs].
  106. Zimmermann, H. and Gosele, U. and Tan, T.Y., Diffusion of Fe in InP via the kick-out mechanism, Appl. Phys. Lett. (USA), vol 62 no. 1 (1993), pp. 75 - 7 [1.108832] [abs].
  107. Zimmermann, H. and Gosele, U. and Tan, T.Y., Modeling of zinc-indiffusion-induced disordering of GaAs/AlAs superlattices, J. Appl. Phys. (USA), vol 73 no. 1 (1993), pp. 150 - 7 [1.353892] [abs].
  108. Tan, T.Y. and You, H.M. and Yu, S. and Gosele, U.M. and Jager, W. and Boeringer, D.W. and Zypman, F. and Tsu, R. and Lee, S.T., Disordering in 69GaAs/71GaAs isotope superlattice structures, J. Appl. Phys. (USA), vol 72 no. 11 (1992), pp. 5206 - 12 [1.352002] [abs].
  109. Tan, T.Y. and You, H.M. and Yu, S. and Goesele, U.M. and Jager, W. and Zypman, F. and Tsu, R. and Lee, S.-T., Disordering and characterization studies of 69GaAs/71GaAs isotope superlattice structures: the effect of outdiffusion of the substrate dopant Si, Defect Engineering in Semiconductor Growth, Processing and Device Technology Symposium (1992), pp. 873 - 80 [abs].
  110. Tan, T.Y. and Yu, S. and Gosele, U., Determination of Ga self-diffusion coefficient in GaAs, Advanced III-V Compound Semiconductor Growth, Processing and Devices Symposium (1992), pp. 739 - 46 [abs].
  111. Yu, S. and Tan, T.Y. and Gosele, U., Mechanism of Cr diffusion in GaAs, Advanced III-V Compound Semiconductor Growth, Processing and Devices Symposium (1992), pp. 747 - 58 [abs].
  112. Hsia, S.L. and Tan, T.Y. and Smith, P.L. and McGuire, G.E., Characterization of epitaxial CoSi2 growth on (001) silicon using Ti-Co bilayer sources, Proceeding of the Sixteenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVI) and the Symposium on Materials and Processing Issues for Large Scale Integrated Electronic and Photonic Arrays (1992), pp. 74 - 84 [abs].
  113. Zimmermann, H. and Tan, T.Y. and Goesele, U., A consistent model for disordering of GaAs/AlAs-superlattices during zinc diffusion, Defect Engineering in Semiconductor Growth, Processing and Device Technology Symposium (1992), pp. 861 - 6 [abs].
  114. Li, J. and Woun-Suck Yang and Tan, T.Y. and Chevacharoenkul, S. and Chapman, R., Liquid silicide formation of the Si wafer free structure during Ni diffusion at 1200°C, J. Appl. Phys. (USA), vol 71 no. 1 (1992), pp. 196 - 203 [1.350736] [abs].
  115. Jianxing Li and Woun-Suck Yang and Tan, T.Y., Enhancement of gold solubility in silicon wafers, J. Appl. Phys. (USA), vol 71 no. 1 (1992), pp. 527 - 9 [1.350693] [abs].
  116. Hsia, S.L. and Tan, T.Y. and Smith, P. and McGuire, G.E., Formation of epitaxial CoSi2 films on (001) silicon using Ti-Co alloy and bimetal source materials, J. Appl. Phys. (USA), vol 70 no. 12 (1991), pp. 7579 - 87 [1.349713] [abs].
  117. Tan, T.Y., Point defect thermal equilibria in GaAs, Mater. Sci. Eng. B, Solid-State Mater. Adv. Technol. (Switzerland), vol B10 no. 3 (1991), pp. 227 - 39 [0921-5107(91)90130-N] [abs].
  118. Tan, T.Y. and Yu, S. and Gosele, U., Determination of vacancy and self-interstitial contributions to gallium self-diffusion in GaAs, J. Appl. Phys. (USA), vol 70 no. 9 (1991), pp. 4823 - 6 [1.349048] [abs].
  119. Yu, S. and Tan, T.Y. and Gosele, U., Diffusion mechanism of chromium in GaAs, J. Appl. Phys. (USA), vol 70 no. 9 (1991), pp. 4827 - 36 [1.349049] [abs].
  120. Taylor, W.J. and Tan, T.Y. and Gosele, U.M., Oxygen precipitation in silicon: the role of strain and self-interstitials, Appl. Phys. Lett. (USA), vol 59 no. 16 (1991), pp. 2007 - 9 [1.106136] [abs].
  121. Chen, S. and Tong Lee, S. and Braunstein, G. and Ko, K.Y. and Tan, T.Y., On the distribution mechanism of voids in Si-implanted GaAs, Defects in Materials Symposium (1991), pp. 421 - 6 [abs].
  122. Kim, Yudong and Tan, Teh Y. and Massoud, Hisham Z. and Fair, Richard B., Modeling the enhanced diffusion of implanted boron in silicon, Proceedings - The Electrochemical Society, vol 91 no. 4 (1991), pp. 304 - 320 [abs].
  123. Tan, T.Y., Intrinsic gettering in Czochralski silicon, Proceedings of the Second Symposium on Defects in Silicon. Defects in Silicon II (1991), pp. 613 - 30 [abs].
  124. Goesele, U. and Lehmann, V. and Stengl, R. and Mitani, K. and Tan, T.Y. and Feijoo, D., Particle protection of semiconductor surfaces by reversible wafer bonding and related concepts, Symposium on Particles on Surfaces: Detection, Adhesion and Removal (1991), pp. 239 -.
  125. Lee, S.-T. and Chen, S. and Braunstein, G. and Ko, K.-Y. and Tan, T.Y., Anomalous electrical activation in Si-implanted GaAs/AlGaAs superlattices, Proceedings of the International Conference on Ion Beam Modification of Materials (1991), pp. 999 -.
  126. Tan, T.Y. and Goesele, U. and Yu, S., Point defects, diffusion mechanisms, and superlattice disordering in GaAs-based materials, Proceedings - The Electrochemical Society, vol 91 no. 4 (1991), pp. 195 - 226 [abs].
  127. Tan, T.Y. and Gosele, U. and Yu, S., Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materials, Crit. Rev. Solid State Mater. Sci. (USA), vol 17 no. 1 (1991), pp. 47 - 106 [abs].
  128. Yu, S. and Tan, T.Y. and Goesele, U., Physical modeling of zinc and beryllium diffusion in gallium arsenide, Proceedings - The Electrochemical Society, vol 91 no. 4 (1991), pp. 345 - 362 [abs].
  129. Tan, T.Y. and Yu, S. and Gosele, U., Atomistic mechanisms of dopant-induced multiple quantum well mixing and related phenomena, Opt. Quantum Electron. (UK), vol 23 no. 7 (1991), pp. 863 - 81 [abs].
  130. Taylor, W.J. and Tan, T.Y. and Gosele, U.M., Correlation of strain and self-interstitial supersaturation during oxygen precipitation in silicon, Proceedings of the Second Symposium on Defects in Silicon. Defects in Silicon II (1991), pp. 255 - 62 [abs].
  131. Lee, S.-T. and Chen, S. and Braunstein, G. and Kei-Yu Ko and Tan, T.Y., Anomalous electrical activation in Si-implanted GaAs/AlGaAs superlattices, Nucl. Instrum. Methods Phys. Res. B, Beam Interact. Mater. At. (Netherlands), vol B59-B60 (1991), pp. 999 - 1002 [0168-583X(91)95750-8] [abs].
  132. Yu, S. and Tan, T.Y. and Gosele, U., Diffusion mechanism of zinc and beryllium in gallium arsenide, J. Appl. Phys. (USA), vol 69 no. 6 (1991), pp. 3547 - 65 [1.348497] [abs].
  133. Chen, S. and Lee, S.-T. and Braunstein, G. and Ko, K.-Y. and Zheng, L.R. and Tan, T.Y., Void formation and its effect on dopant diffusion and carrier activation in Si-implanted GaAs, Jpn. J. Appl. Phys. 2, Lett. (Japan), vol 29 no. 11 (1990), pp. 1950 - 3 [abs].
  134. Yang, W.-S. and Ahn, K.-Y. and Li, J. and Smith, P. and Tan, T.Y. and Gosele, U., Gettering phenomena in directly bonded silicon wafers, Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology: Semiconductor Silicon 1990 (1990), pp. 628 - 38 [abs].
  135. Yang, W.S. and Ahn, K.Y. and Lia, J. and Smith, P. and Tan, T.Y. and Goesele, U., Gettering phenomena in directly bonded silicon wafers, Proceedings - The Electrochemical Society, vol 90 no. 7 (1990), pp. 628 - 638 [abs].
  136. S.-Tong Lee and Chen, S. and Braunstein, G. and Kei-Yu Ko and Ott, M.L. and Tan, T.Y., Void formation, electrical activation, and layer intermixing in Si-implanted GaAs/AlGaAs superlattices, Appl. Phys. Lett. (USA), vol 57 no. 4 (1990), pp. 389 - 91 [1.103701] [abs].
  137. Ahn, K.-Y. and Stengl, R. and Tan, T.Y. and Gosele, U. and Smith, P., Growth, shrinkage, and stability of interfacial oxide layers between directly bonded silicon wafers, Appl. Phys. A, Solids Surf. (West Germany), vol A50 no. 1 (1990), pp. 85 - 94 [abs].
  138. Kola, R.R. and Rozgonyi, G.A. and Li, J. and Rogers, W.B. and Tan, T.Y. and Bean, K.E. and Lindberg, K., Transition metal silicide precipitation in silicon induced by rapid thermal processing and free-surface gettering, Appl. Phys. Lett. (USA), vol 55 no. 20 (1989), pp. 2108 - 10 [1.102342] [abs].
  139. Shaofeng Yu and Gosele, U.M. and Tan, T.Y., A model of Si diffusion in GaAs based on the effect of the Fermi level, J. Appl. Phys. (USA), vol 66 no. 7 (1989), pp. 2952 - 61 [1.344176] [abs].
  140. Taylor, W. and Marioton, B.P.R. and Tan, T.Y. and Gosele, U., The diffusivity of silicon self-interstitials, Radiat. Eff. Defects Solids (UK), vol 111-112 no. 1-2 (1989), pp. 131 - 50 [abs].
  141. Goesele, U. and Marioton, B.P.R. and Tan, T.Y., Non-equilibrium point defects and diffusion in silicon and gallium arsenide, Proceedings of the International Conference on the Science and Technology of Defect Control in Semiconductors (1989), pp. 77 -.
  142. Tan, T.Y. and Gosele, U., Mechanisms of self-diffusion and of doping-enhancement of superlattice disordering in GaAs and AlAs compounds, Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium (1989), pp. 221 - 32 [abs].
  143. Rogers, W.B. and Massoud, H.Z. and Fair, R.B. and Gosele, U.M. and Tan, T.Y. and Rozgonyi, G.A., The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon, J. Appl. Phys. (USA), vol 65 no. 11 (1989), pp. 4215 - 19 [1.343303] [abs].
  144. Gosele, U. and Ahn, K.-Y. and Marioton, B.P.R. and Tan, T.Y. and Lee, S.-T., Do oxygen molecules contribute to oxygen diffusion and thermal donor formation in silicon?, Appl. Phys. A, Solids Surf. (West Germany), vol A48 no. 3 (1989), pp. 219 - 28 [abs].
  145. Marioton, B.P.R. and Tan, T.Y. and Gosele, U., Influence of dislocations on diffusion-induced nonequilibrium point defects in III-V compounds, Appl. Phys. Lett. (USA), vol 54 no. 9 (1989), pp. 849 - 51 [1.100846] [abs].
  146. Ahn, K.-Y. and Stengl, R. and Tan, T.Y. and Gosele, U. and Smith, P., Stability of interfacial oxide layers during silicon wafer bonding, J. Appl. Phys. (USA), vol 65 no. 2 (1989), pp. 561 - 3 [1.343141] [abs].
  147. Gosele, U. and Tan, T.Y., Point defects and diffusion in silicon and gallium arsenide, Diffus. Defect Data, Solid State Data A, Defect Diffus. Forum (Liechtenstein), vol A59 (1988), pp. 1 - 16 [abs].
  148. Hill, A.J. and Cocks, F.H. and Goesele, U.M. and Jones, P.L. and Tan, T.Y. and Kingon, A.I., Investigation of Y-Ba-Cu-O superconducting materials by positron annihilation lifetime spectroscopy, High-Temperature Superconducting Materials. Preparations, Properties, and Processing (1988), pp. 305 - 11 [abs].
  149. Tan, T.Y. and Gosele, U., Diffusion mechanisms and superlattice disordering in GaAs, Mater. Sci. Eng. B, Solid-State Mater. Adv. Technol. (Switzerland), vol B1 no. 1 (1988), pp. 47 - 65 [0921-5107(88)90030-X] [abs].
  150. Tan, T.Y. and Gosele, U., Mechanisms of doping-enhanced superlattice disordering and of gallium self-diffusion in GaAs, Appl. Phys. Lett. (USA), vol 52 no. 15 (1988), pp. 1240 - 2 [1.99168] [abs].
  151. Tan, T.Y. and Gosele, U., Destruction mechanism of III-V compound quantum well structures due to impurity diffusion, J. Appl. Phys. (USA), vol 61 no. 5 (1987), pp. 1841 - 5 [1.338027] [abs].
  152. Tan, T.Y. and Kleinhenz, R. and Schneider, C.P., On the kinetics of oxygen clustering and thermal donor formation in Czochralski silicon, Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon (1986), pp. 195 - 204 [abs].
  153. Oehrlein, G.S. and Tan, T.Y. and Kleinhenz, R.L. and Lindstrom, J.L., On the question of oxygen diffusion during oxygen related thermal donor formation in silicon, Materials Issues in Silicon Integrated Circuit Processing Symposium (1986), pp. 65 - 7 [abs].
  154. Tan, T. Y. and Kung, C. Y., ON OXYGEN PRECIPITATION RETARDATION/RECOVERY PHENOMENA, NUCLEATION INCUBATION PHENOMENON, AND THE EXIGENT-ACCOMMODATION-VOLUME FACTOR OF PRECIPITATION., Proceedings - The Electrochemical Society, vol 86-4 (1986), pp. 864 - 873 [abs].
  155. Ochrlein, G. S. and Tan, T. Y. and Kleinhenz, R. L. and Lindstrom, J. L., ON THE QUESTION OF OXYGEN DIFFUSION DURING OXYGEN RELATED THERMAL DONOR FORMATION IN SILICON., Materials Research Society Symposia Proceedings, vol 71 (1986), pp. 65 - 67 [abs].
  156. Marioton, B. P. R. and Gosele, U. and Tan, T. Y., ARE SELF-INTERSTITIALS REQUIRED TO EXPLAIN NONEQUILIBRIUM DIFFUSION PHENOMENON IN SILICON?, Chemtronics, vol 1 no. 4 (1986), pp. 156 - 160 [abs].
  157. Tan, T.Y., Exigent-accommodation-volume of precipitation and formation of oxygen precipitates in silicon, Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon (1986), pp. 269 - 79 [abs].
  158. Tan, T.Y. and Kung, C.Y., Oxygen precipitation retardation and recovery phenomena in Czochralski silicon: experimental observations, nuclei dissolution model, and relevancy with nucleation issues, J. Appl. Phys. (USA), vol 59 no. 3 (1986), pp. 917 - 31 [1.336564] [abs].
  159. Braunig, D. and Yang, K.H. and Tan, T.Y. and Schneider, C.P., In depth generation lifetime profiling of heat-treated Czochralski silicon, Phys. Status Solidi A (East Germany), vol 92 no. 1 (1985), pp. 327 - 35 [abs].
  160. Gosele, U. and Tan, T.Y., The influence of point defects on diffusion and gettering in silicon, Impurity Diffusion and Gettering in Silicon Symposium (1985), pp. 105 - 16 [abs].
  161. Goesele, U. and Tan, T. Y., INFLUENCE OF POINT DEFECTS ON DIFFUSION AND GETTERING IN SILICON., Materials Research Society Symposia Proceedings, vol 36 (1985), pp. 105 - 116 [abs].
  162. Yang, K. H. and Tan, T. Y., ON THE INTERACTION OF INTRINSIC AND EXTRINSIC GETTERING SCHEMES IN SILICON., Materials Research Society Symposia Proceedings, vol 36 (1985), pp. 223 - 229 [abs].
  163. Yang, K.H. and Tan, T.Y., On the interaction of intrinsic and extrinsic gettering schemes in silicon, Impurity Diffusion and Gettering in Silicon Symposium (1985), pp. 223 - 9 [abs].
  164. Tan, T.Y. and Gosele, U., Point defects, diffusion processes, and swirl defect formation in silicon, Appl. Phys. A, Solids Surf. (West Germany), vol A37 no. 1 (1985), pp. 1 - 17 [abs].
  165. Tan, T.Y. and Yang, K.H. and Schneider, C.P., Observation of a doping-dependent orientation effect of the depletion of silicon self-interstitials during oxidation, J. Appl. Phys. (USA), vol 57 no. 6 (1985), pp. 1812 - 15 [1.334408] [abs].
  166. Butz, R. and Rubloff, G.W. and Tan, T.Y. and Ho, P.S., Chemical and structural aspects of reaction at the Ti/Si interface, Phys. Rev. B, Condens. Matter (USA), vol 30 no. 10 (1984), pp. 5421 - 9 [5421] [abs].
  167. Tan, T.Y., Intrinsic point defects and diffusion processes in silicon, Electron Microscopy of Materials Symposium (1984), pp. 127 - 41 [abs].
  168. Tan, T.Y., Characterization of semiconductor silicon by transmission electron microscopy, Proc. SPIE - Int. Soc. Opt. Eng. (USA), vol 452 (1984), pp. 170 - 6 [abs].
  169. Tan, T. Y. and Gosele, U., POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON., Electrochemical Society Extended Abstracts, vol 84-1 (1984), pp. 60 - [abs].
  170. Tan, Teh Y., CHARACTERIZATION OF SEMICONDUCTOR SILICON TRANSMISSION ELECTRON MICROSCOPY., Proceedings of SPIE - The International Society for Optical Engineering, vol 452 (1984), pp. 170 - 176 [abs].
  171. Tan, T.Y. and Gosele, U., Point defects and diffusion processes in silicon, VLSI Science and Technology-1984. Proceedings of the Second International Symposium on Very Large Scale Integration Science and Technology. Materials for High Speed/High Density Applications (1984), pp. 151 - 75 [abs].
  172. Tan, T. Y. and Goesele, U., POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON., Proceedings - The Electrochemical Society, vol 84-7 (1984), pp. 151 - 175 [abs].
  173. Clabes, J.G. and Rubloff, G.W. and Tan, T.Y., Chemical reaction and Schottky-barrier formation at V/Si interfaces, Phys. Rev. B, Condens. Matter (USA), vol 29 no. 4 (1984), pp. 1540 - 50 [1540] [abs].
  174. Schmid, P.E. and Ho, P.S. and Foll, H. and Tan, T.Y., Effects of variations of silicide characteristics on the Schottky-barrier height of silicide-silicon interfaces, Phys. Rev. B, Condens. Matter (USA), vol 28 no. 8 (1983), pp. 4593 - 601 [4593] [abs].
  175. Tan, T. Y. and Gosele, U. and Morehead, F. F., ON THE NATURE OF POINT DEFECTS AND THE EFFECT OF OXIDATION ON SUBSTITUTIONAL DOPANT DIFFUSION IN SILICON., Applied Physics A: Solids and Surfaces, vol A 31 no. 2 (1983), pp. 97 - 108 [abs].
  176. Goesele, U. and Tan, T. Y., ROLE OF VACANCIES AND SELF-INTERSTITIALS IN DIFFUSION AND AGGLOMERATION PHENOMENA IN SILICON., Proceedings - The Electrochemical Society, vol 83-4 (1983), pp. 17 - 36.
  177. Tan, T. Y. and Morehead, F. and Gosele, U., DETERMINATION OF VACANCY AND SELF-INTERSTITIAL CONTRIBUTIONS TO THE Si SELF-DIFFUSION COEFFICIENT., Electrochemical Society Extended Abstracts, vol 83-1 (1983), pp. 432 - 433.
  178. Gosele, U. and Tan, T.Y., Thermal donor formation by the agglomeration of oxygen in silicon, Defects in Semiconductors II, Symposium Proceedings (1983), pp. 153 - 7 [abs].
  179. Smith, D. A. and Tan, T. Y., GRAIN GROWTH AND GRAIN-BOUNDARY DISLOCATIONS IN POLYSILICON., Advances in Ceramics, vol 6 (1983), pp. 184 - 191.
  180. Goesele, U. and Tan, T. Y., THERMAL DONOR FORMATION BY THE AGGLOMERATION OF OXYGEN IN SILICON., Materials Research Society Symposia Proceedings, vol 14 (1983), pp. 153 - 157.
  181. Tan, T. Y. and Morehead, F. and Gosele, U., EXAMINATION OF VACANCY AND SELF-INTERSTITIAL CONTRIBUTIONS TO SILICON SELF-DIFFUSION AND SWIRL DEFECT FORMATION., Proceedings - The Electrochemical Society, vol 83-9 (1983), pp. 325 - 336.
  182. Goesele, U. and Tan, T. Y., NATURE OF POINT DEFECTS AND THEIR INFLUENCE ON DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURES., Materials Research Society Symposia Proceedings, vol 14 (1983), pp. 45 - 59.
  183. Gosele, U. and Tan, T.Y., The nature of point defects and their influence on diffusion processes in silicon at high temperatures, Defects in Semiconductors II, Symposium Proceedings (1983), pp. 45 - 59 [abs].
  184. Tan, T. Y. and Ginsberg, B. J., OBSERVATION OF OXIDATION-ENHANCED AND -RETARDED DIFFUSION OF ANTIMONY IN SILICON: THE BEHAVIOR OF (111) WAFERS., Materials Research Society Symposia Proceedings, vol 14 (1983), pp. 141 - 145.
  185. Tan, T.Y. and Ginsberg, B.J., Observation of oxidation-enhanced and -retarded diffusion of antimony in silicon: the behavior of (111) wafers, Defects in Semiconductors II, Symposium Proceedings (1983), pp. 141 - 5 [abs].
  186. Tan, T.Y. and Gosele, U. and Morehead, F.F., On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon, Appl. Phys. A, Solids Surf. (West Germany), vol A31 no. 2 (1983), pp. 97 - 108 [abs].
  187. Tan, T.Y. and Ginsberg, B.J., Observation of oxidation-enhanced and oxidation-retarded diffusion of antimony in silicon, Appl. Phys. Lett. (USA), vol 42 no. 5 (1983), pp. 448 - 50 [1.93966] [abs].
  188. Smith, David A. and Tan, T. Y., EFFECT OF DOPING AND OXIDATION ON GRAIN GROWTH IN POLYSILICON., Materials Research Society Symposia Proceedings, vol 5 (1982), pp. 65 - 70.
  189. Smith, D.A. and Tan, T.Y., Effect of doping and oxidation on grain growth in polysilicon, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting (1982), pp. 65 - 70 [abs].
  190. Goesele, U. and Tan, T. Y., OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON., Applied Physics A: Solids and Surfaces, vol A28 no. 2 (1982), pp. 79 - 92 [abs].
  191. Tan, T.Y. and Gosele, U., Kinetics of silicon stacking fault growth/shrinkage in an oxidizing ambient containing a chlorine compound, J. Appl. Phys. (USA), vol 53 no. 7 (1982), pp. 4767 - 78 [1.331312] [abs].
  192. Gosele, U. and Tan, T.Y., Oxygen diffusion and thermal donor formation in silicon, Appl. Phys. A, Solids Surf. (West Germany), vol A28 no. 2 (1982), pp. 79 - 92 [abs].
  193. Tan, T.Y. and Gosele, U., Oxidation-enhanced or retarded diffusion and the growth or shrinkage of oxidation-induced stacking faults in silicon, Appl. Phys. Lett. (USA), vol 40 no. 7 (1982), pp. 616 - 19 [1.93200] [abs].
  194. Schmid, P.E. and Ho, P.S. and Tan, T.Y., Correlation between Schottky barrier height and phase stoichiometry/structure of silicide-silicon interfaces, J. Vac. Sci. Technol. (USA), vol 20 no. 3 (1982), pp. 688 - 9 [1.571629] [abs].
  195. Krakow, W. and Tan, T. Y. and Foell, H., DETECTION OF POINT DEFECT CHAINS IN ION IRRADIATED SILICON BY HIGH RESOLUTION ELECTRON MICROSCOPY. (1981), pp. 185 - 190.
  196. Tan, T. Y., DISLOCATION NUCLEATION MODELS FROM POINT DEFECT CONDENSATIONS IN SILICON AND GERMANIUM., vol 2 (1981), pp. 163 - 172.
  197. , DEFECTS IN SEMICONDUCTORS, PROCEEDINGS OF THE MATERIALS RESEARCH SOCIETY ANNUAL MEETING, 1980., Materials Research Society Symposia Proceedings, vol 2 (1981), pp. 537 - [abs].
  198. Foell, H. and Tan, T.Y. and Krakow, W., Undissociated dislocations and intermediate defects in As+ ion damaged silicon, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting (1981), pp. 173 - 7 [abs].
  199. Krakow, W. and Tan, T.Y. and Foll, H., The identification of atomic defect chain configurations in ion irradiated Si by high resolution electron microscopy, Microscopy of Semiconducting Materials, 1981. Proceedings of the 2nd Oxford Conference (1981), pp. 23 - 8 [abs].
  200. Tice, W.K. and Tan, T.Y., Precipitation of oxygen and intrinsic gettering in silicon, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting (1981), pp. 367 - 80 [abs].
  201. Tan, T.Y., Dislocation nucleation models from point defect condensations in silicon and germanium, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting (1981), pp. 163 - 72 [abs].
  202. Krakow, W. and Tan, T.Y. and Foell, H., Detection of point defect chains in ion irradiated silicon by high resolution electron microscopy, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting (1981), pp. 185 - 90 [abs].
  203. Foell, H. and Tan, T. Y. and Krakow, W., UNDISSOCIATED DISLOCATIONS AND INTERMEDIATE DEFECTS IN As** plus ION DAMAGED SILICON., vol 2 (1981), pp. 173 - 177.
  204. Tice, W. K. and Tan, T. Y., PRECIPITATION OF OXYGEN AND INTRINSIC GETTERING IN SILICON., vol 2 (1981), pp. 367 - 380.
  205. , DEFECTS IN SEMICONDUCTORS, PROCEEDINGS OF THE MATERIALS RESEARCH SOCIETY ANNUAL MEETING., vol 2 (1981), pp. 537 -.
  206. , Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting (1981), pp. xi+537 - [abs].
  207. Tan, T.Y. and Foell, H. and Mader, S. and Krakow, W., A tentative identification of the nature of 113 stacking faults in Si-model and experiment, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting (1981), pp. 179 - 84 [abs].
  208. Tan, T. Y. and Foell, H. and Mader, S. and Krakow, W., A TENTATIVE IDENTIFICATION OF THE NATURE OF left brace 113 right brace STACKING FAULTS IN Si- MODEL AND EXPERIMENT., vol 2 (1981), pp. 179 - 184.
  209. Tan, T.Y. and Foll, H. and Krakow, W., Intermediate defects in silicon and germanium, Microscopy of Semiconducting Materials, 1981. Proceedings of the 2nd Oxford Conference (1981), pp. 1 - 7 [abs].
  210. Tan, T.Y., Atomic modelling of homogeneous nucleation of dislocations from condensation of point defects in silicon, Philos. Mag. A, Phys. Condens. Matter Defects Mech. Prop. (UK), vol 44 no. 1 (1981), pp. 101 - 25 [abs].
  211. Tan, T.Y. and Foll, H. and Hu, S.M., On the diamond-cubic to hexagonal phase transformation in silicon, Philos. Mag. A, Phys. Condens. Matter Defects Mech. Prop. (UK), vol 44 no. 1 (1981), pp. 127 - 40 [abs].
  212. Tan, T.Y. and Gosele, U., Growth kinetics of oxidation-induced stacking faults in silicon: a new concept, Appl. Phys. Lett. (USA), vol 39 no. 1 (1981), pp. 86 - 8 [1.92526] [abs].
  213. Tan, T.Y. and Foll, H. and Krakow, W., Detection of extended interstitial chains in ion-damaged silicon, Appl. Phys. Lett. (USA), vol 37 no. 12 (1980), pp. 1102 - 4 [1.91888] [abs].
  214. Rimini, E. and Chu, W.-K. and Baglin, J.E.E. and Tan, T.Y. and Hodgson, R.T., Laser annealing of silicon implanted with both argon and arsenic, Appl. Phys. Lett. (USA), vol 37 no. 1 (1980), pp. 81 - 3 [1.91711] [abs].
  215. Ho, P.S. and Tan, T.Y., Submicron mask alignment by coherent light sources, IBM Tech. Discl. Bull. (USA), vol 23 no. 1 (1980), pp. 360 - 1 [abs].
  216. Tan, T.Y., Residual stacking-fault-type contrast in silicon after apparent unfaulting reactions, Appl. Phys. Lett. (USA), vol 34 no. 10 (1979), pp. 714 - 716 [1.90616] [abs].
  217. Tan, T.Y. and Tsu, R. and Ho, P.S. and Tu, K.N., Crystallization of amorphous silicides by energy beam annealing, AIP Conf. Proc. (USA) no. 50 (1978), pp. 533 - 8 [abs].
  218. Tsu, R. and Baglin, J.E. and Tan, T.Y. and Tsai, M.Y. and Park, K.C. and Hodgson, R., Laser recrystallization of ion-implanted Si by frequency-doubled Nd:YAG laser, AIP Conf. Proc. (USA) no. 50 (1978), pp. 344 - 50 [abs].
  219. Tan, T.Y. and Ho, P.S. and Tsu, R., Temperature distribution and microstructure in small-diameter laser beam annealed amorphous silicon, AIP Conf. Proc. (USA) no. 50 (1978), pp. 463 - 9 [abs].
  220. Goodhew, P.J. and Tan, T.Y. and Balluffi, R.W., Low energy planes for tilt grain boundaries in gold, Acta Metall. (USA), vol 26 no. 4 (1978), pp. 557 - 67 [0001-6160(78)90108-6] [abs].
  221. Tan, T.Y. and Gardner, E.E. and Tice, W.K., Intrinsic gettering by oxide precipitate induced dislocations in Czochralski silicon, Electrochemical Society Spring Meeting (papers in extended summary form only received) (1977), pp. 198 - 200 [abs].
  222. Tan, T.Y. and Huang, H.C.W. and Tice, W.K., Characterization of oxide precipitate-dislocation complexes in Czochralski-grown Si wafers, Electrochemical Society Spring Meeting (papers in extended summary form only received) (1977), pp. 195 - 7 [abs].
  223. Tan, T.Y. and Garnder, E.E. and Tice, W.K., Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si, Appl. Phys. Lett. (USA), vol 30 no. 4 (1977), pp. 175 - 6 [1.89340] [abs].
  224. Tan, T.Y. and Wu, L.L. and Tice, W.K., Nucleation of stacking faults at oxide precipitate-dislocation complexes in silicon, Appl. Phys. Lett. (USA), vol 29 no. 12 (1976), pp. 765 - 7 [1.88941] [abs].
  225. Tan, T.Y. and Tice, W.K., Oxygen precipitation and the generation of dislocations in silicon, Philos. Mag. (UK), vol 34 no. 4 (1976), pp. 615 - 31 [abs].
  226. Tan, T. Y. and Tice, W. K., OXYGEN PRECIPITATION AND THE GENERATION OF DISLOCATIONS IN SILICON., Philosophical Magazine, vol 34 no. 4 (1976), pp. 615 - 631 [abs].
  227. Tice, W.K. and Tan, T.Y. and Geipel, H.J., The isochronal annealing behavior of silicon implanted with arsenic ions, Electrochemical Society Fall Meeting. (Extended abstracts only received) (1976), pp. 863 - 4 [abs].
  228. Tice, W.K. and Tan, T.Y., Nucleation of CuSi precipitate colonies in oxygen-rich silicon, Appl. Phys. Lett. (USA), vol 28 no. 9 (1976), pp. 564 - 5 [1.88825] [abs].
  229. Tan, T.Y. and Hwang, J.C.M. and Goodhew, P.J. and Balluffi, R.W., Preparation and applications of thin film specimens containing grain boundaries of controlled geometry, Thin Solid Films (Switzerland), vol 33 no. 1 (1976), pp. 1 - 11 [0040-6090(76)90582-4] [abs].
  230. Tan, T. Y. and Sass, S. L. and Balluffi, R. W., DETECTION OF THE PERIODIC STRUCTURE OF HIGH-ANGLE TWIST BOUNDARIES EM DASH 2. HIGH RESOLUTION ELECTRON MICROSCOPY STUDY., Philosophical Magazine, vol 31 no. 3 (1975), pp. 575 - 585 [abs].
  231. Sass, S. L. and Tan, T. Y. and Balluffi, R. W., DETECTION OF THE PERIODIC STRUCTURE OF HIGH-ANGLE TWIST BOUNDARIES EM DASH 1. ELECTRON DIFFRACTION STUDY., Philosophical Magazine, vol 31 no. 3 (1975), pp. 559 - 573 [abs].
  232. Tan, T.Y. and Sass, S.L. and Balluffi, P.W., The detection of the periodic structure of high-angle twist boundaries. II. High resolution electron microscopy study, Philos. Mag. (UK), vol 31 no. 3 (1975), pp. 575 - 85 [abs].
  233. Sass, S.L. and Tan, T.Y. and Balluffi, R.W., The detection of the periodic structure of high-angle twist boundaries. I. Electron diffraction study, Philos. Mag. (UK), vol 31 no. 3 (1975), pp. 559 - 73 [abs].
  234. Wagner, Wilfried, R. and Tan, T. Y. and Balluffi, R. W., FACETING OF HIGH-ANGLE GRAIN BOUNDARIES IN THE COINCIDENCE LATTICE., Philosophical Magazine, vol 29 no. 4 (1974), pp. 895 - 904 [abs].
  235. Wagner, W.R. and Tan, T.Y. and Balluffi, R.W., Faceting of high-angle grain boundaries in the coincidence lattice, Philos. Mag. (UK), vol 29 no. 4 (1974), pp. 895 - 904 [abs].
  236. Balluffi, R.W. and Tan, T.Y., Comments on the range of applicability of the grain boundary (secondary) dislocation model to high angle grain boundaries, Scr. Metall. (USA), vol 6 no. 11 (1972), pp. 1033 - 40 [abs].
  237. Tan, T.Y. and Bell, W.L. and Thomas, G., Crystal thickness dependence of Kikuchi line spacing, Philos. Mag. (UK), vol 24 no. 188 (1971), pp. 417 - 24 [abs].
  238. Tan, T.Y., Dynamical theory of Kikuchi electrons, Proceedings of the 28th annual meeting of the Electron Microscopy Society of America (condensed papers) (1970), pp. 42 - 3 [abs].
  239. Schwarz, S.E. and Tan, T.Y., Wave interactions in saturable absorbers, Applied Physics Letters, vol 10 no. 1 (1967), pp. 4 - 6 [abs].
  240. Tan, T.Y. and Nunn, W.M., Jr., Azimuthally periodic electrostatically focused electron ribbon beams, IEEE Transactions on Electron Devices, vol ED-13 no. 10 (1966), pp. 706 - 713 [abs].
  241. Tan, T.Y. and Nunn, Jr., W.M., Azimuthally periodic electrostatically focused electron ribbon beams, IEEE Transactions on Electron Devices, vol ED-13 no. 10 (1966), pp. 706 - 713 [abs].
  242. Nunn, W.M., Jr. and Tan, T.Y., Electrostatically-focused ribbon beams employing periodic-cylindrical electron lenses, IEEE Transactions on Electron Devices, vol ED-11 no. 11 (1964), pp. 524 - 525 [abs].
  243. Taylor, W.J. and Gosele, U. and Tan, T.Y., SiO2 precipitate strain relief in Czochralski Si: Self-interstitial emission versus prismatic dislocation loop punching, J. Appl. Phys. (USA), vol 72 no. 6 (15), pp. 2192 - 6 [1.351610] [abs].
  244. Corbett, J.W. and Karins, J.P. and Tan, T.Y., Ion-induced in semiconductors, Nucl. Instrum. Methods (Netherlands), vol 182-183 (1), pp. 457 - 76 [0029-554X(81)90717-5] [abs].
  245. Hsia, S.L. and Tan, T.Y. and Smith, P. and McGuire, G.E., Resistance and structural stabilities of epitaxial CoSi2 films on (001) Si substrates, J. Appl. Phys. (USA), vol 72 no. 5 (1), pp. 1864 - 73 [1.351659] [abs].
  246. Plekhanov, P.S. and Gafiteanu, R. and Gosele, U.M. and Tan, T.Y., Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications, J. Appl. Phys. (USA), vol 86 no. 5 (1), pp. 2453 - 8 [1.371075] [abs].
  247. Chen, C.H. and Gosele, U.M. and Tan, T.Y., Dopant diffusion and segregation in semiconductor heterostructures: Pt. III. Diffusion of Si into GaAs, Appl. Phys. A, Mater. Sci. Process. (Germany), vol A69 no. 3 (0), pp. 313 - 21 [s003390051007] [abs].
  248. Geipel, H.J. and Shasteen, R.B. and Tan, T.Y. and Tice, W.K., Control of stacking fault generation in recessed oxide processing, IBM Tech. Discl. Bull. (USA), vol 21 no. 4 (0), pp. 1373 - [abs].
  249. Ho, P.S. and Tan, T.Y. and Lewis, J.E. and Rubloff, G.W., Chemical and structural properties of the Pd/Si interface during the initial stages of silicide formation, J. Vac. Sci. Technol. (USA), vol 16 no. 5 (0), pp. 1120 - 4 [1.570171] [abs].